S34ML02G200BHV003 Allicdata Electronics
Allicdata Part #:

S34ML02G200BHV003-ND

Manufacturer Part#:

S34ML02G200BHV003

Price: $ 5.25
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 6...
DataSheet: S34ML02G200BHV003 datasheetS34ML02G200BHV003 Datasheet/PDF
Quantity: 1000
2300 +: $ 4.76847
Stock 1000Can Ship Immediately
$ 5.25
Specifications
Series: ML-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34ML02G200BHV003 is a type of memory that belongs to the NAND-flash series. It is the newest addition to the Series 34 ML02 family and has the additional feature of a 200 MHz data bus. This type of memory offers users higher performance and improved storage capacities.

Application Field

The S34ML02G200BHV003 is ideal for applications requiring high performance and large storage capabilities. It is well suited for use in digital applications such as gaming systems, navigation systems, PDA\'s, digital video recorders, digital cameras, digital audio players, and portable media players. This type of memory can also be used in solid state drives (SSD) as well as in embedded systems.

The S34ML02G200BHV003 is also suitable for embedded systems in applications such as industrial automation, medical electronics, and telecommunications. The device features a small package size which makes it suitable for space-constrained applications. Furthermore, the device has a low power consumption and a high temperature operating range.

Working Principle

The S34ML02G200BHV003 is a NAND-type flash memory. The device utilizes NAND cells to store data. The NAND cells are connected in series to form a memory array. Each cell is capable of storing one bit of data. The cells are arranged in a grid structure so that data can be addressed one column at a time.

The operation of the device is based on the principal of charge injection. A charge is injected into a floating gate in each NAND cell. This charge will remain stored until it is discharged by applying a voltage. When the voltage is applied, data is either read or written to the cell. By applying a read or write voltage, the data stored in the cell can be accessed.

The S34ML02G200BHV003 also uses an architecture that allows for larger page sizes compared to conventional NAND-type flash memories. This improves the performance of the device and makes it more suitable for applications that require large data transfers.

Conclusion

The S34ML02G200BHV003 is a NAND-type flash memory that offers performance and storage capacities higher than conventional memories. Its small size and low power consumption make it suitable for a variety of digital, industrial, and embedded applications. The device utilizes charge injection and a larger page architecture to achieve its high performance.

The specific data is subject to PDF, and the above content is for reference

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