S34ML02G200TFI500 Allicdata Electronics
Allicdata Part #:

S34ML02G200TFI500-ND

Manufacturer Part#:

S34ML02G200TFI500

Price: $ 5.01
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 4...
DataSheet: S34ML02G200TFI500 datasheetS34ML02G200TFI500 Datasheet/PDF
Quantity: 1000
96 +: $ 4.56028
Stock 1000Can Ship Immediately
$ 5.01
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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S34ML02G200TFI500 is a dense phase memory technology that integrates controller, NAND Flash and DRAM for enhanced system performance and reliability. It is one of the densest and highest performing memory technologies available in the market today and is used by a wide range of embedded and consumer applications. This article examines the application fields and working principles of this memory technology.

Application Fields

The S34ML02G200TFI500 memory technology is used in various applications. It is used in embedded data storage, industrial grade systems, automotive electronics and consumer electronic products such as digital cameras, camcorders, 3D gaming systems, tablets and smartphones. It is also utilized in automotive instrument panels, flight information displays, general embedded systems, secure communications systems and industrial control systems.

The high density and performance of this memory technology make it an ideal solution for tight form factor applications. It is capable of handling high speed data throughput, providing low power consumption and high storage density. It offers an efficient way to store, access and manipulate data.

The S34ML02G200TFI500 is also used for system-level storage solutions due to its large storage capacity and scalability. It can be used to store large volumes of data, including all types of digital assets, web content, and application software. This makes it an ideal solution for applications such as data centers, cloud computing services and enterprise storage.

Working Principle

The S34ML02G200TFI500 memory technology is based on a denser NAND Flash and DRAM design. It utilizes a controllers and Flash to facilitate the data transfer process. NAND Flash is a non volatile semiconductor memory technology based on charge transfer through floating gate architectures. DRAM is a volatile memory technology which stores data using an electrical charge.

The S34ML02G200TFI500 utilizes this denser NAND and DRAM design in order to increase storage density, reduce power consumption and improve system performance. Data is transferred to and from the memory through the controllers. The controllers organize the data and manage the flash and DRAM structures for efficient and reliable data transmission.

The S34ML02G200TFI500 memory technology is also capable of supporting advanced features such as error correction coding and enhanced data integrity. Error correction coding is used to detect and correct errors in stored and transferred data. Enhanced data integrity provides a method to detect any tampering or unauthorized access of data.

The S34ML02G200TFI500 memory technology is designed for high density and performance. It is ideal for a wide range of embedded and consumer applications and is used for efficient storage, access, and manipulation of data. It also supports advanced features such as error correction coding and improved data integrity.

The specific data is subject to PDF, and the above content is for reference

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