S34ML04G100TFB003

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

S34ML04G100TFB003 is a product in the Memory category. It\'s a single-level cell, quad-plane NOR Flash memory, with a capacity of 1 GB. It has a broad range of applications due to its reliable performance and storage capacity.

S34ML04G100TFB003 memory is primarily used for storage and retrieval of data. It is ideal for embedded systems that require the storage of large amounts of data, such as digital cameras, game consoles, automotive systems, etc. Additionally, since it stores data in an electrically erasable and re-writable format, it is much more reliable than a hard drive which has mechanical components and requires frequent maintenance. It is also significantly smaller than a hard drive and can easily be integrated in any embedded system.

The working principle of S34ML04G100TFB003 memory is based on the floating gate transistor. The floating gate is a type of insulated gate transistor which has an extra conductive layer between the gate and the source or drain regions. This layer is the floating gate which is an insulated control gate, so it can store electrons and hold information. When a voltage is applied to the gate, it attracts the electrons from the floating gate and controls the flow of current through the transistor. This way, data can be written to and stored in the memory.

The memory also has various features that make it more reliable for use in embedded systems. These include fast programming and reading, wear leveling algorithms to extend the life of the cells, and error correction codes to enhance reliability and readability. Furthermore, S34ML04G100TFB003 also has endurance of up to 10K program/erase cycles.

Overall, S34ML04G100TFB003 memory is a reliable and cost-effective solution for embedded systems that require a high degree of data storage capacity. It has a wide range of applications and its working principle is based on the fundamental concept of the floating gate transistor. Additionally, various features and error correction codes further enhance its reliability and usability.

The specific data is subject to PDF, and the above content is for reference