S34ML04G200BHI500 Allicdata Electronics
Allicdata Part #:

S34ML04G200BHI500-ND

Manufacturer Part#:

S34ML04G200BHI500

Price: $ 6.45
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 6...
DataSheet: S34ML04G200BHI500 datasheetS34ML04G200BHI500 Datasheet/PDF
Quantity: 1000
210 +: $ 5.86566
Stock 1000Can Ship Immediately
$ 6.45
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34ML04G200BHI500 is a memory device from Toshiba. It is a multi-level cell type NAND Flash Memory, which is based on a 3-bit-per-cell structure and has a 32Gb die capacity. This type of memory features an advanced process technology and a wide range of operating voltages, making it applicable for many devices.

The S34ML04G200BHI500 is often used in portable media players, digital cameras, and mobile phones. It also finds its application in embedded devices such power tools and hand-held devices. It is often used in digital video surveillance, networking, and communication as well. Furthermore, automotive components such as in-car entertainment systems, navigation systems, and vehicle control components can also benefit from this type of memory.

As for its working principle, this type of memory incorporates a 2D Floating Gate structure, which helps in improving its retention characteristic, increasing the multi-level cell characteristics and data speed, and improving the cycle endurance. It also has advanced controller technology and command cycles that allow for easier management tasks. It also has an error correcting codes (ECC) system that helps improve data accuracy.

In addition, the S34ML04G200BHI500 memory device has a low write failure rate due to its high-speed write capability, which ensures its reliable integration with other applications. It also provides superior read and write power consumption, enabling the device to run on low voltage and consume less energy. Further, it also supports a good level of data protection through its protected bits and address marks.

When it comes to programming, the S34ML04G200BHI500 is highly flexible as its programming operations can be performed either through the standard pin interface or through its in-built command set. It is also compatible with many operating systems, thus allowing for greater flexibility in integration with a wide range of devices. The device also utilizes advanced wear-leveling algorithms to monitor and extend its write cycles.

Overall, the S34ML04G200BHI500 is one of the most advanced memory devices available on the market. With its wide range of potential applications and its advanced architecture, it is sure to provide reliable and efficient performance in the field of data storage. It is definitely a great choice for those who need reliable memory storage solutions.

The specific data is subject to PDF, and the above content is for reference

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