S34ML04G200BHV003

Memory technologies play an important role in modern computing, enabling both the storage and retrieval of large amounts of data. The S34ML04G200BHV003 is a specific type of memory developed for the specific purpose of non-volatile storage. This piece of memory is an ideal solution for applications where persistent data is necessary, such as in embedded systems, or in applications where power loss could cause catastrophic data destruction.

The S34ML04G200BHV003 is a Flash NAND (Not AND) type of memory, which is in a long line of Flash memory products developed by SPANSION. It has a 4Gb (Gigabits) capacity and has a 200-million program/erase cycle endurance - yielding a very long life-span for this type of memory device.

The S34ML04G200BHV003 employs a NAND cell structure with single polysilicon floating gate technology, and has access speeds of up to 35ns. This particular Flash memory type uses an interfacing protocol of ONFI 2.1 (Open Nand Flash Interface).

Part of the beauty of this technology is the fact that it can be incorporated into a variety of application areas. It is designed to be used in a broad range of products and in a range of operating environments. The Flash memory provides very fast read access speeds as well as ultra-fast write speeds. It is also very robust and can survive harsh environments such as extremely cold temperatures.

The working principle of S34ML04G200BHV003 is relatively simple and straightforward: the memory cells located on the device contain a floating gate that connects to an insulated gate. When a voltage is applied to the insulated gate, an electric current flows through the floating gate and into the channel of the memory cell. This channel is then programmed with a specific bit of data. The data stored in this channel can then be read out on subsequent reads.