S34ML04G200TFI500

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Memory refers to a computer storage circuit or device which is used for maintaining digital data by utilizing electrical or opto-optical technology. It can be divided into two categories: static and dynamic. S34ML04G200TFI500 is a static random access memory (SRAM) made by Micron, an American global manufacturer of computer memory. This type of memory has the ability to store data and retain it even when the power is off. Due to its low power consumption, great speed and relatively low cost, it has become an ideal choice for a range of applications.

Applications

S34ML04G200TFI500 are mainly used in consumer products and applications such as digital cameras, global positioning system (GPS) receivers, smart phones, digital video recorders (DVRs), medical imaging equipment and embedded systems. The memory is also used for military and aerospace applications because it offers a high level of reliability and robustness. In addition, its low power consumption, fast read and write speeds make it suitable for performance-intensive applications as well.

Working Principle

S34ML04G200TFI500 SRAM cells consist of four transistors, two of which are known as access transistors and the other two are cross-couple inverters. The access transistors are triggered when a logic pulse is applied on the word line, enabling the cell. At the same time, the cross-couple inverters hold stored bit information. The access transistors provide a direct output, while the voltage stored in the cross-couple inverters maintains the memory state.

The SRAM cell is sensitive to power fluctuations, as it needs a continuous supply of power to hold the bits in its register. When the supply is interrupted, the contents of the memory may be lost. To solve this issue, S34ML04G200TFI500 has a built-in capacitor for the data retention feature, ensuring that the data stored in the cell does not get lost even during power distribution interruptions.

Conclusion

S34ML04G200TFI500 is a static random access memory (SRAM) made by Micron, and is used in a range of consumer and industrial applications. It is suitable for performance-intensive applications due to its low power consumption, fast read and write speeds, and relatively low cost compared to other types of memory. The memory cell consists of four transistors, two of which are access transistors and the other two are cross-couple inverters, providing the cell with an output and a data retention feature.

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