S34MS01G100BHI900

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Introduction

The S34MS01G100BHI900 is a type of non-volatile memory (NVM) device based on the65 nanometer process technology. It is a low-power, high-density, multi-level cell (MLC) NAND Flash memory which is designed for consumer electronics applications. It features a 1 Gb (128 Mbit) memory and is capable of storing up to 15 million bytes of data. The device is available in a range of densities from 64 Mbit to 1 Gbit.

Memory Application Field of S34MS01G100BHI900

As a high-density non-volatile memory device, the S34MS01G100BHI900 is suitable for various consumer electronics applications. It is ideal for a wide range of products including embedded systems, camcorders, digital cameras, personal media players, portable video game players, and digital music players.

The device also finds use in automotive applications such as navigation systems, dashboard systems, and vehicle entertainment systems. The device is also highly suited for application in mobile phones, notebooks, and other mobile devices where high-density memory and low-power features are important.

Working Principle of S34MS01G100BHI900

The S34MS01G100BHI900 utilizes a multi-level cell (MLC) memory structure that allows for a variety of data to be stored in a single cell. Each MLC cell consists of two p-type charge storage transistors (P-CSTs), and two n-type charge storage transistors (N-CSTs). The two P-CSTs store a “1” bit and the two N-CSTs store a “0” bit.

The P-CSTs and N-CSTs are surrounded by a tunnel oxide layer that prevents leakage between the MLC cells. This makes the device more reliable, enabling it to successfully store data for a longer period of time. The use of the MLC structure also allows the device to function with a lower power consumption compared to single-cell devices.

The device is organized into a 32 word (x4 nibble) byte configuration that allows for a higher density compared to other non-volatile memories. The S34MS01G100BHI900 also features a cycle endurance of 100,000 program/erase cycles, making it suitable for a wide range of data storage needs.

Conclusion

The S34MS01G100BHI900 is a high-density non-volatile memory device that is ideal for use in a variety of applications, including embedded systems, navigation systems, and personal media players. It utilizes a multi-level cell (MLC) structure that enables it to store a variety of data and function with a low-power consumption. The device is organized in a 32 word (x4 nibble) byte configuration and features a cycle endurance of 100,000 program/erase cycles, making it an ideal choice for a wide range of data storage needs.

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