S34MS01G104BHV010

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S34MS01G104BHV010 is a high-performance and reliable NAND Flash memory device. It is designed to meet the increasing demand for large capacity and high speed data storage. With its 4K pages of multi-level cell (MLC) technology, S34MS01G104BHV010 provides high-density storage solutions for consumer and embedded applications.

S34MS01G104BHV010 provides a wide range of memory solutions for applications such as digital cameras, music players, mobile phones, industrial control boards and automotive systems. It also offers a high level of reliability and performance, with an architected memory solution that can provide up to 64GB of storage capacity and an internal clock frequency of 204MHz.

The device works on the concept of associative arrays, which is a way of mapping logical addresses to physical memory locations. Each memory cell in the array stores 2bits of data, which are stored and retrieved using a 4-bit address. The architecture of the device is designed to minimize the power consumption, while offering high-speed data transfer.

The device also features advanced wear-level algorithms that can intelligently equalize the access load across available blocks in the array. This ensures that the device is able to maximize its read/write performance and reliability. Using the wear-level algorithms, the device can switch between blocks of memory, thus optimizing performance and increasing the lifespan of the device.

S34MS01G104BHV010 also offers enhanced error correction, which reduces the number of bit errors that can occur in the device due to the number of memory locations it contains. This mapping technology reduces the chances of data being lost or corrupted in the event of a power failure.

S34MS01G104BHV010 is also compliant with the Open NAND Flash Interface (ONFI) standards version 2.1. This ensures that the device is compatible with a wide range of systems, while offering the performance and speed required for various applications.

In addition, S34MS01G104BHV010 is designed to meet the needs of a wide range of applications. With its high-density memory cells, the device can be used in a variety of consumer, industrial, automotive and communication applications.

Overall, S34MS01G104BHV010 is a high-performance, reliable and cost effective NAND Flash memory device that can provide up to 64GB of storage capacity. With its advanced wear-level algorithms, enhanced error correction and ONFI compliance, the device ensures a safe and efficient data storage solution for a variety of applications.

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