S34MS01G200BHB000 Allicdata Electronics
Allicdata Part #:

S34MS01G200BHB000-ND

Manufacturer Part#:

S34MS01G200BHB000

Price: $ 3.38
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 45...
DataSheet: S34MS01G200BHB000 datasheetS34MS01G200BHB000 Datasheet/PDF
Quantity: 1000
210 +: $ 3.07125
Stock 1000Can Ship Immediately
$ 3.38
Specifications
Series: Automotive, AEC-Q100, MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Introduction

The S34MS01G200BHB000 is a type of NAND flash memory, specifically a type of multi-level cell (MLC) NAND module. It’s manufactured by IDT/Micron, and is used in a variety of consumer and industrial applications. It’s an 8-bit wide, 2Gb device that offers a higher performance and capacity than other products on the market. In this article, we’ll explore the applications and working principle of the S34MS01G200BHB000.

Applications

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Consumer Electronics such as Smartphones, Cameras and Tablets
  • Intelligent Embedded Systems
  • Network Security Systems
  • Data Storage and Backup
  • Industrial Automation Applications

The S34MS01G200BHB000 is a valuable component in memory and storage applications. It’s used in applications such as solid state drives (SSDs) and USB flash drives, providing greater performance and capacity than other products on the market. The memory module is also used in consumer electronics and embedded systems to increase performance and capacity compared to standard memory technology.

The S34MS01G200BHB000 also has several industrial applications. It can be used in network security systems, data storage, and industrial automation. The module is well-suited for these applications due to its low power consumption, high speed, and error-checking capabilities.

Working Principle

The S34MS01G200BHB000 is a type of NAND flash memory, specifically a type of multi-level cell (MLC) NAND module. It works by storing data in cells, which are divided into two levels. Level 0 holds the logic 1 state and level 1 holds the logic 0 state. When a cell is programmed, the charge level is set according to the binary data.

The S34MS01G200BHB000 uses floating gate transistor technology to store data in the cell. Each cell has a small floating gate made of a thin-film material. When a voltage is applied to the cell, the charge level of the cell is set according to the data. This technology allows for higher data rates and faster write times than traditional NAND flash memory.

The S34MS01G200BHB000 is a reliable device that offers superior performance and capacity than other memory modules on the market. It’s well-suited for a variety of applications, from consumer electronics and industrial applications to data storage and backup.

Conclusion

The S34MS01G200BHB000 NAND Flash Memory is a high-performance and high-capacity module used in a variety of applications. It’s a reliable device that offers superior performance and capacity than other memory modules on the market. It’s used in applications such as solid state drives (SSDs) and USB flash drives, providing greater performance and capacity than other products on the market. It also has several industrial applications, such as network security systems, data storage, and industrial automation. The S34MS01G200BHB000 works by storing data in cells, which are divided into two levels. It uses floating gate transistor technology to store data in the cell, allowing for faster write times and higher data rates than traditional NAND flash memory.

The specific data is subject to PDF, and the above content is for reference

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