S34MS01G200TFI003 Allicdata Electronics
Allicdata Part #:

S34MS01G200TFI003-ND

Manufacturer Part#:

S34MS01G200TFI003

Price: $ 3.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 45...
DataSheet: S34MS01G200TFI003 datasheetS34MS01G200TFI003 Datasheet/PDF
Quantity: 1000
1000 +: $ 2.74953
Stock 1000Can Ship Immediately
$ 3.02
Specifications
Series: MS-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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The S34MS01G200TFI003 is a memory product which has a variety of uses within a range of different industries, including automotive, industrial and consumer electronics. It is a non-volatile memory device, meaning it can retain data even if the power is turned off, and it is particularly well-suited to applications where reliability is important.

The device has a 4Mb memory size, with a 32-bit wide data bus configuration. It is suitable for use in a variety of different microprocessors, and is available in two versions: an asynchronous type and a synchronous type. The asynchronous type is designed for very low power use, whilst the synchronous type is designed for faster access times and more reliable operation. The memory device also features a write protection functionality, which allows data to be protected from accidental overwriting.

The S34MS01G200TFI003 operates in a variety of ways. It works using a Static Random Access Memory (SRAM) process, where cells are accessed in a random order, which allows for faster data transfer rates. It is also possible to attach a controller to the device, allowing commands to be sent to it over a serial bus. This allows for faster access times – as low as 400ns – and also helps to reduce power consumption by eliminating the need to externally control the chip.

The S34MS01G200TFI003 is an ideal memory solution for applications which require a reliable, fast, and low-power memory device. It is suitable for a variety of applications in consumer electronics, automotive and industrial applications, due to its ease of integration, low power consumption and good performance. In automotive applications in particular, its write protection feature is particularly useful, ensuring that data is not accidentally written to, or changed without the appropriate authorisation.

The working principle of the S34MS01G200TFI003 is relatively straightforward. Data is stored in the device as bits, arranged in a series of cells or transistors. These cells can be accessed in a random order, allowing for faster data transfer speeds. A controller can also be used to send commands to the memory device, allowing it to perform specific operations. Once data is written to the device, it can be read out again in sequence, providing reliable storage.

In conclusion, the S34MS01G200TFI003 is a reliable memory device which is well-suited to a variety of different applications. Its low power consumption, good performance and write protection feature makes it especially attractive for automotive applications, and its easy integration into a variety of microprocessors makes it a great choice for a wide range of applications. It is a valuable device for both consumer electronics and industrial applications, as it provides reliable storage of data despite power interruptions.

The specific data is subject to PDF, and the above content is for reference

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