S34MS01G204BHI013 Allicdata Electronics
Allicdata Part #:

S34MS01G204BHI013-ND

Manufacturer Part#:

S34MS01G204BHI013

Price: $ 2.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 1Gb (64M x 16) Parallel 45...
DataSheet: S34MS01G204BHI013 datasheetS34MS01G204BHI013 Datasheet/PDF
Quantity: 1000
2300 +: $ 2.65782
Stock 1000Can Ship Immediately
$ 2.93
Specifications
Series: MS-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34MS01G204BHI013 is an NAND flash memory device, used commonly in the electronics industry. The memory device has a wide range of applications and is particularly used in industrial automation. As a specialized high-speed non-volatile memory, it is designed to offer high-density storage and rapid access times, making it ideal for short-term data storage and retrieval.

Application Field

The S34MS01G204BHI013 memory is mainly suited for industrial applications, making it useful for a range of tasks including machine control, data loggers, and flash-based products such as embedded systems, digital cameras and audio players. It is also ideal for embedded applications, including automotive, consumer, medical, and industrial electronics.

The device is also suitable for design applications where high-density memory is needed in a small package, such as mobile phones, digital cameras, PDAs and multimedia players. With its fast access time, it is also suitable for high-speed data storage and retrieval, making it an ideal solution for applications such as data logging and image processing.

Working Principle

The S34MS01G204BHI013 operates using NAND flash technology. It is organized logically as blocks of memory cells, each of which contain 512 bytes of data. Each block is divided into pages, with each page being 128 bytes in size. The device is accessed in random order, meaning that data may be written to and read from any page in any block.

The device operates by charging and discharging the cells, which are then read as binary 1s and 0s. When writing to the device, the data is first written to a page of the memory, then transferred to the target memory cell where it is then stored. When reading the data, it is read from the memory cell and then transferred to a page where it is available for reading.

The device has both volatile and non-volatile memory, meaning that data can be stored for long periods without the need for power. As the device has a high storage capacity, it is also suitable for applications where data needs to be stored for a long period of time, or in multiple locations. Finally, the device offers low power consumption, making it a good fit for applications where power is at a premium.

The specific data is subject to PDF, and the above content is for reference

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