Allicdata Part #: | S34MS02G100BHB000-ND |
Manufacturer Part#: |
S34MS02G100BHB000 |
Price: | $ 6.44 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 2G PARALLEL |
More Detail: | FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45... |
DataSheet: | S34MS02G100BHB000 Datasheet/PDF |
Quantity: | 1000 |
210 +: | $ 5.85372 |
Series: | Automotive, AEC-Q100, MS-1 |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
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S34MS02G100BHB000 is a type of memory device, which is widely used in automotive and industrial applications. Its main purpose is to provide reliable and efficient storage of data of a specific type. This type of memory device is a high density and versatile one, which can be used in many different contexts and environments. In this article, we will discuss the application field and working principle of S34MS02G100BHB000.
Application Field of S34MS02G100BHB000
S34MS02G100BHB000 is a type of non- volatile memory device, which is used in automotive and industrial applications. This type of device is specifically designed to provide reliable and efficient storage of data. It is suitable for applications that involve safety-critical operations. Also, it is ideal for medical and automotive control systems, as it ensures safe and secure storage of data. This type of memory device is also suitable for industrial applications, where large volumes of data have to be stored in a reliable and secure manner.
In addition, S34MS02G100BHB000 memory device is also used in a wide variety of embedded systems. Due to its high density, this type of memory device can store large amounts of data, making it ideal for embedded systems. It is well-suited for applications such as motor controllers, software-defined radios, filtration and signal processing systems, as well as sensors and actuators. Furthermore, this type of memory device is also used in other areas such as military, space and aeronautics.
Working Principle of S34MS02G100BHB000
S34MS02G100BHB000 is a type of non-volatile memory device, which is designed to store data in a safe and secure manner. This type of memory device operates on the principle of Breakdown Endurance Programming. It uses an electric field to create molecular bonds between its electrons and the corresponding field. This enables it to store data for longer periods of time, even when there is no power supply.
The S34MS02G100BHB000 memory device is also designed to be highly reliable and resilient to the environment. Its components are made of high-quality materials, which makes it resistant to corrosion and other types of environmental damage. Furthermore, it can also perform a self-testing routine to ensure that the stored data is still accurate and reliable.
Finally, S34MS02G100BHB000 memory device is also designed to be highly energy efficient. It utilizes a low-power standby mode, which consumes less energy, thus reducing the overall energy consumption. Furthermore, it also supports various power-saving technologies, such as sleep mode, which helps to further reduce energy consumption.
Conclusion
In conclusion, S34MS02G100BHB000 is a type of memory device, which is widely used in automotive and industrial applications. It is designed to provide reliable and efficient storage of data and is ideal for applications where safety and security are essential. Furthermore, this type of memory device operates on the principle of Breakdown Endurance Programming and is highly resilient to the environment and energy efficient.
The specific data is subject to PDF, and the above content is for reference
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S34MS01G200TFI000 | Cypress Semi... | 4.19 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
S34MS01G200BHI000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 63BG... |
S34ML01G200BHV000 | Cypress Semi... | -- | 1000 | IC FLASH 1G PARALLEL 63BG... |
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