S34MS02G200BHV000 Allicdata Electronics
Allicdata Part #:

S34MS02G200BHV000-ND

Manufacturer Part#:

S34MS02G200BHV000

Price: $ 6.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45...
DataSheet: S34MS02G200BHV000 datasheetS34MS02G200BHV000 Datasheet/PDF
Quantity: 1000
210 +: $ 5.75814
Stock 1000Can Ship Immediately
$ 6.34
Specifications
Series: MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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S34MS02G200BHV000 is a member of Micron’s family of client solid-state drive (SSD). It is a low-power, small form factor, NAND flash-based storage device that is designed for storage systems for client and mobile applications. This product is specifically designed for client and mobile read-heavy applications, to provide enterprise-grade performance and dependability, low power consumption and higher capacity all in a small form factor.

Application Field

This SSD is suited for a variety of applications, ranging from IOT, consumer, embedded and industrial applications. Its small size and low power requirements make it ideal for mobile, embedded and IOT applications, especially those with space and power constraints. It is also well suited for enterprise applications such as data centers and cloud computing, as its design features make it an excellent solution for large-scale data storage and retrieval.

Working Principle

The S34MS02G200BHV000 is an NAND Flash-based storage device that utilizes a two-dimensional array of NAND Flash memory cells to store data. Data is stored in blocks of pages, and each block consists of a number of pages. Data is written to and read from the NAND Flash memory cells using a simple yet powerful write/erase cycle. This write/erase cycle works as follows: First, data is written to the NAND Flash memory cells using a small current. This current erases any existing data in the cells and prepares it for new data. Once the new data is written, the memory cells are “programmed”, which gives the device its non-volatile memory properties. Finally, the data is read from the memory cells using a low voltage. This process is fast and efficient, allowing for the SSD to operate at speeds up to 645 MB/s.

Conclusion

The S34MS02G200BHV000 is an excellent example of a low-power, high-performance storage device. Its low power requirements, small size, and high performance make it ideal for a variety of applications, ranging from mobile and IoT to enterprise storage applications. It is a powerful device that is capable of providing enterprise-grade performance and dependability in a portable form factor.

The specific data is subject to PDF, and the above content is for reference

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