S34MS02G200GHI000

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S34MS02G200GHI000 is a Flash memory IC (Integrated Circuit) produced by Toshiba that operates in small package flash memory devices. It is a small-sized nonvolatile memory chip that employs a variety of techniques to achieve high speeds, low power consumption and improved read/write performance. This IC is mainly employed in consumer electronics, portable computing devices and Internet of Things (IoT) applications. This article provides an overview of the application field of S34MS02G200GHI000, and its working principle.

Application Field of S34MS02G200GHI000

S34MS02G200GHI000 is a MLC (Multi-level Cell) NAND Flash memory IC, that is fabricated with 28nm process technology. It is mainly used in consumer electronics, portable computing devices, consumer and industrial IoT, and automated systems. This IC provides high-speed read and write performance and low power consumption, making it suitable for use in embedded systems where power consumption and performance are essential. Its small size also makes it suitable for use in portable handheld devices such as cell phones and PDAs. In addition, it can also be used in Automotive and Industrial applications, where its small size and low power consumption allows for continuous operation without overheating or consuming too much power.

S34MS02G200GHI000 also offers improved data retention and endurance levels, making it ideal for portable memory devices. It provides a reliable and cost effective solution for data storage applications, including data logging, digital badge control, and audio/video recording.

Working Principle of S34MS02G200GHI000

S34MS02G200GHI000 is a NAND memory IC (Integrated Circuit) that employs a Split-Gate technology to achieve high-speed and low-power operation. The Split-Gate technology utilizes a continuous stream of pulses, generated by a row decoder, to control the operation of the device. The pulses modulate the current in the split-gate transistors and thus determine the state of the memory cells, allowing for high-speed read and write operations.

The device utilizes a three-level stacked cell structure, which stores two bits of data in each memory cell. Each cell is composed of two transistors connected in series, with the source of each transistor connected to the drain of the other. The two transistors in each cell are independently programmed by a high voltage level. The two transistors can respectively hold two values, such as 0 and 1, representing two binary bits of data. By programming each cell with two different levels of voltage, the device can store two bits per cell.

In addition, S34MS02G200GHI000 also utilizes a number of advanced programming and data life cycle technologies to ensure that the stored data is consistently accurate. This includes Error Correction Code (ECC), on-chip voltage boosting technology, and copyback technology. ECC is a process that checks the code stored in each cell and ensures that the data is accurately recorded by correcting errors that may occur during the writing or erasing process.

The on-chip voltage boosting technology is used to enhance the programming speed and reduces the power consumption associated with the write operations, while the copyback technology is used to improve the performance of the read/write operations when data moves from one memory chip to another.

To conclude, S34MS02G200GHI000 is a MLC (Multi-level Cell) NAND Flash memory IC that provides high-speed read and write performance and low power consumption. It is mainly used in consumer electronics, portable computing devices, consumer and industrial IoT, and automated systems. It employs a Split-Gate technology and various advanced programming and data life cycle technologies to ensure the stored data is accurate and reliable.

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