S34MS02G200TFI003 Allicdata Electronics
Allicdata Part #:

S34MS02G200TFI003-ND

Manufacturer Part#:

S34MS02G200TFI003

Price: $ 4.97
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45...
DataSheet: S34MS02G200TFI003 datasheetS34MS02G200TFI003 Datasheet/PDF
Quantity: 1000
1000 +: $ 4.51828
Stock 1000Can Ship Immediately
$ 4.97
Specifications
Series: MS-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory: S34MS02G200TFI003 application field and working principle

The S34MS02G200TFI003 is a 2Gb multi-chip package (MCP) consisting of two 1Gb or four 512Mb NAND flash memory chips. The chips are connected and accessible via a single NAND Flash interface. It is the third generation of Micron’s S34 MCP product line, featuring enhanced endurance and performance. The S34MS02G200TFI003 is ideal for a variety of applications in a variety of industries.

The S34MS02G200TFI003 is primarily used in reliable data storage applications, such as embedded storage for automotive, industrial and other electronic systems, graphics and multimedia cards, camera storage, and system-on-module (SOM) applications. The device is designed to be highly reliable and offers a combination of fast write speeds and high endurance to meet the demanding requirements of sophisticated applications. Additionally, the S34MS02G200TFI003 comes with an ECC engine and an advanced error correction protocol to ensure data accuracy, which makes it well-suited for enterprise applications like cloud services.

Working principle

The S34MS02G200TFI003 is based on Micron\'s third-generation NAND flash technology. It utilizes a monolithic design and a collection of proprietary technologies to help balance the performance and endurance of the device. This is accomplished by combining the benefits of Micron\'s fourth-generation NAND Flash architecture, along with its advanced error correction algorithms and advanced controller firmware.

The NAND technology used in the S34MS02G200TFI003 is designed to offer more bits per cell, which allows for more data to be stored per chip. Additionally, the device includes extra memory cells to ensure long-term data retention and reliability. Its advanced ECC engine helps to ensure that the data stored in the chips remains accurate over the long-term.

The S34MS02G200TFI003 is a highly-efficient memory device, combining the reliability of a solid-state drive (SSD) with the fast read and write speeds of a DRAM product. Its low-power consumption and very fast write speeds enable the device to process and store large amounts of data very quickly, making it well-suited for enterprise applications that require rapid data processing.

Conclusion

The S34MS02G200TFI003 is an advanced, reliable, high-performance multi-chip package used for a variety of applications across many industries. Its advanced features, such as its ECC engine and higher endurance, make it well-suited for enterprise applications, as well as for data storage applications. With its combination of fast write speeds and low-power consumption, the S34MS02G200TFI003 is an ideal solution for a variety of data storage needs.

The specific data is subject to PDF, and the above content is for reference

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