S34MS04G100TFB000 Allicdata Electronics
Allicdata Part #:

S34MS04G100TFB000-ND

Manufacturer Part#:

S34MS04G100TFB000

Price: $ 9.82
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 48TSOP I
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45...
DataSheet: S34MS04G100TFB000 datasheetS34MS04G100TFB000 Datasheet/PDF
Quantity: 1000
96 +: $ 8.92584
Stock 1000Can Ship Immediately
$ 9.82
Specifications
Series: MS-1
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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Memory is a key component of computer technology today and plays a vital role in ensuring that data is accurately received, stored, and retrieved when needed. The S34MS04G100TFB000 is a NAND Flash memory device that has a wide range of applications in modern technology and offers a variety of features and benefits to users. This memory device is an industry-standard and versatile Flash memory, used as an embedded memory component in a variety of digital products.

The S34MS04G100TFB000 offers several key benefits, including: high-speed read and write operations, one-time programmable and erasable operations, and consistency over a wide temperature range and a wide range of voltages. This device can be used in a variety of applications, such as for digital product storage, for code storage, for data transfer in security applications, and for embedded functions such as file sorting and exchange.

This NAND Flash memory device also offers a range of features from the leading Flash vendors, including: wide bus width accommodating 2Xnm, 2K page size, page read and page program operations, 8-byte status register, and true random addressing. The device comes in many sizes ranging from 4Gbit to 64Gbit to meet the different storage needs of users.

In addition, the S34MS04G100TFB000 has a reliable and robust performance and features a number of features designed to improve signal integrity and reliability such as dynamic timing control and single-wire error correction and double-level cell (DLC). This device also offers flexibility and configurability, making it very adaptable to different ambient conditions.

The S34MS04G100TFB000 is also built with a variety of safety features and data protection technologies to ensure the data stored within the memory device is safe and secure. Some of the safety features of the device include encryption, low-voltage detection, and error detection and correction (ECC).

The working principle of the S34MS04G100TFB000 is based on the NAND Flash memory technology. This type of technology is an advanced form of Flash memory, where data is stored in the form of multiple cells that are interconnected. Each cell represents a binary value, either 0 or 1, which, when combined in different combinations, represents a variety of data.

As a NAND Flash device, the S34MS04G100TFB000 has the advantage of being able to store large amounts of data in a relatively small size. It is also able to store data even if power is lost or the device is disconnected, making it ideal for high-performance applications such as multimedia storage. As well, the device features advanced features such as ECC, write-through and read-ahead algorithms, and Error Correction Code (ECC). These features help to ensure the security and accuracy of data stored in the NAND Flash memory device.

In conclusion, coupled with the benefits, features, and unique characteristics mentioned above, it is understandable why the S34MS04G100TFB000 is a popular choice for many consumers. The combination of reliability, robust performance, data protection, and flexibility make it a suitable choice for applications where accuracy, speed, and longevity of data operations is paramount.

The specific data is subject to PDF, and the above content is for reference

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