S34MS04G200BHI000

Series:	MS-2
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-BGA (11x9)

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Cost-Efficient Memory by S34MS04G200BHI000S34MS04G200BHI000 is a NAND Flash memory solution that provides cost effective performance for products requiring large and reliable storage space. Suitable for a wide range of industries, this 4GB NAND Flash memory is perfect for applications that demand high-durability and cost-efficiency.Specifically designed to provide device makers with a cost-effective solution, the S34MS04G200BHI000’s small size and power consumption makes it ideal for use in handheld devices, set-top boxes, and other products where cost constraint is an issue. As a reliable and compact storage solution, the S34MS04G200BHI000 is also ideal for industrial and automotive applications.The S34MS04G200BHI000 provides 4GB of large capacity storage in a small 1.8 mm package, making it much smaller than traditional storage solutions. As a result, device makers with space and power constraints are able to maximize available memory capabilities and reduce the overall size of their products. Its large capacity also enables device makers to store more data while using fewer components, greatly reducing overall cost and energy consumption.The S34MS04G200BHI000 features fast boot up times, allowing device makers to quickly access data, reducing costs associated with data access and reducing time to market. This feature also makes the memory device more reliable and stable during constant data transfers. Furthermore, the S34MS04G200BHI000 is extremely durable and offers a wide temperature range for operation, making it ideal for use in extreme environments.Furthermore, the S34MS04G200BHI000 is equipped with a variety of safety and protection features to ensure secure data storage. This includes temperature monitoring, ECC (error-correcting code) support, CRC (Cyclic Redundancy Check) support, and Overwrite Protection. Additionally, the memory device is accompanied with built-in flash management functions such as wear-leveling, bad block management and support for secure data erase operation.In terms of performance, the S34MS04G200BHI000 is capable of providing a data transfer rate of up to 108MB/s and a Random Performance of 28K IOPs. This makes it suitable for most applications that are intensive in data transfers, such as gaming, video streaming, and file transfers. Furthermore, the memory device has undergone rigorous tests to verify its read/write endurance, making the S34MS04G200BHI000 a reliable and robust memory solution. Overall, the S34MS04G200BHI000 offers an excellent storage solution that is both cost-effective and reliable. Its durability and large capacity make it suitable for numerous applications, ranging from handheld devices to industrial products. Furthermore, its wide temperature range and error-correcting support ensure data security and stability. With its combination of performance, reliability and affordability, the S34MS04G200BHI000 is an excellent memory solution for many device makers.

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