S34MS04G204BHI010 Allicdata Electronics
Allicdata Part #:

1274-1102-ND

Manufacturer Part#:

S34MS04G204BHI010

Price: $ 9.71
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel 4...
DataSheet: S34MS04G204BHI010 datasheetS34MS04G204BHI010 Datasheet/PDF
Quantity: 1000
1 +: $ 8.82630
Stock 1000Can Ship Immediately
$ 9.71
Specifications
Series: MS-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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S34MS04G204BHI010 memory is a NAND-based memory device developed by Micron. It is commonly used to store information such as music, images, and other data. The device is primarily used in consumer, automotive, industrial and medical applications where high performance and reliability is required.

The S34MS04G204BHI010 memory device\'s physical specification includes a TSOP package, with a form factor of 8x20mm, a total capacity of 4GB and an access speed of 120MBps. It offers a high level of performance with a rapid start-up time and a read/write time of up to 15us. It offers a very reliable NAND-based memory solution with enhanced write-protection features, and a self-repair option with bad block management and wear-leveling algorithms.

The key applications of S34MS04G204BHI010 memory include industrial and medical equipment, automotive navigation and infotainment systems, and consumer electronics. The memory device is ideal for these applications due to its high performance, long-term reliability, low power consumption and cost-effectiveness.

The working principle of the S34MS04G204BHI010 memory device is based on NAND-based unitcells. Each unitcell consists of two NAND transistors and a select gate transistor, with the combination forming a discrete storage element. Each storage element stores one bit of data. When writing data to the device, the data is written to the unitcells by changing the voltage levels of the transistors. When the data is read, the voltage levels are checked and the data can be retrieved. Due to the NAND architecture, the memory device is able to perform fast read/write operations.

In conclusion, the S34MS04G204BHI010 memory device from Micron is an excellent choice for applications that require high performance, reliability, and low power consumption. Its NAND-based architecture allows for rapid read/write operations, making it ideal for data-intensive applications such as industrial and medical equipment, automotive navigation and infotainment systems, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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