SI1046X-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1046X-T1-GE3TR-ND

Manufacturer Part#:

SI1046X-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 0.606A SC89-3
More Detail: N-Channel 20V 250mW (Ta) Surface Mount SC-89-3
DataSheet: SI1046X-T1-GE3 datasheetSI1046X-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1046X-T1-GE3 is a N-channel enhancement mode field effect transistor (FET). It is a type of transistor that uses an electric field to control the conductivity of a semiconductor. This transistor is designed for low-power applications and is characterized by low on-resistance, high-breakdown voltage, and low gate-source voltage. This device can be used in a wide range of applications such as amplifiers, switches, and power converters. It is also useful in automotive, industrial, and consumer electronics.

The working principle of a N-channel MOSFET is based on the electrostatic attraction between a gate and a source. When a voltage is applied to the gate, a voltage drop occurs between the gate and the source, causing an electric field between the two. This electric field attracts electrons from the source to the gate, causing a current to flow through the transistor and producing a pull-up or a pull-down effect, depending on the polarity of the voltage applied to the gate. The amount of current that can be pulled up or pulled down is determined by the resistance between the gate and the source.

The SI1046X-T1-GE3 has a threshold voltage of 1.8V and a maximum Rds(on) of 3.0 Ohms. This device also has a maximum drain to source voltage of 25V and a maximum drain current rating of 5A. For protection against over-voltage, the device is designed with current limiting and triple sensing thermal protection. The device is also rated for a Junction Temperature of 175°C.

The SI1046X-T1-GE3 can be used in a variety of applications, such as motor control circuits, DC to DC converters, power MOSFET drivers, and relay drivers. It can also be used in conjunction with power ICs and power management ICs, such as those used in switching mode power supplies. This device can be used in low-side switch applications by applying a voltage to the gate of the transistor.

Other applications for the SI1046X-T1-GE3 include high-side switches, load switches, battery protection circuits, and solenoid drivers. This device can also be used in digital logic gates or as part of an Astable Multivibrator circuit. Furthermore, the SI1046X-T1-GE3 can also be used in high-voltage applications, such as DC motor drivers, HID lamps, and automotive lighting.

The SI1046X-T1-GE3 is a versatile device with a wide range of uses. Its robust design and low on-resistance make it suitable for a variety of applications. The triple sensing thermal protection ensures a safe operation when in high load conditions, while the current limiting feature prevents current overload. This device is also easy to use, making it a good choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI10" Included word is 40
Part Number Manufacturer Price Quantity Description
SI1060-A-GM Silicon Labs -- 3437 IC RF TXRX+MCU ISM ...
SI1023-B-GM3R Silicon Labs 4.07 $ 1000 IC RF TXRX+MCU ISM ...
SI1035X-T1-GE3 Vishay Silic... -- 6000 MOSFET N/P-CH 20V SC-89Mo...
SI1037X-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 20V 0.77A SC8...
SI1077X-T1-GE3 Vishay Silic... -- 27000 MOSFET P-CH 20V SC89-6P-C...
SI1003-E-GM2 Silicon Labs 3.68 $ 106 IC RF TXRX+MCU ISM ...
SI1004-E-GM2 Silicon Labs 3.8 $ 1 IC RF TXRX+MCU ISM ...
SI1064-A-GM Silicon Labs 2.49 $ 406 IC RF TXRX+MCU ISM ...
SI1034-B-GM3R Silicon Labs 4.79 $ 1000 IC RF TXRX+MCU ISM ...
SI1011-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1001-E-GM2R Silicon Labs 3.5 $ 1000 IC RF TXRX+MCU ISM ...
SI1037-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1023-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1016X-T1-GE3 Vishay Silic... -- 1000 MOSFET N/P-CH 20V SC89-6M...
SI1021-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1022R-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 60V 330MA SC-...
SI1040X-T1-GE3 Vishay Silic... -- 3000 IC LOAD SW N/P-CH MOSFET ...
SI1032-B-GM3 Silicon Labs 4.17 $ 1000 IC RF TXRX+MCU ISM ...
SI1024-B-GMR Silicon Labs 4.27 $ 1000 IC RF TXRX+MCU ISM ...
SI1021-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1046R-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 0.606A SC...
SI1034X-T1-E3 Vishay Silic... -- 1000 MOSFET 2N-CH 20V 0.18A SO...
SI1031-A-GMR Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1013R-T1-GE3 Vishay Silic... -- 138000 MOSFET P-CH 20V 350MA SC-...
SI1027-B-GM Silicon Labs 5.24 $ 1000 IC RF TXRX+MCU ISM ...
SI1012-A-GM Silicon Labs 0.0 $ 1000 IC RF TXRX+MCU ISM ...
SI1021R-T1-GE3 Vishay Silic... -- 33000 MOSFET P-CH 60V 190MA SC-...
SI1065X-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 12V 1.18A SC8...
SI1035-B-GM3R Silicon Labs 4.26 $ 1000 IC RF TXRX+MCU ISM ...
SI1012X-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 500MA SC8...
SI1054X-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 12V 1.32A SC8...
SI1082-A-GM Silicon Labs 2.55 $ 260 IC RF TXRX+MCU ISM ...
SI1081-A-GM Silicon Labs 2.83 $ 319 IC RF TXRX+MCU ISM ...
SI1026X-T1-E3 Vishay Silic... -- 1000 MOSFET 2N-CH 60V 0.305A S...
SI1023X-T1-E3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 0.37A SO...
SI1024-B-GM3 Silicon Labs 4.93 $ 1000 IC RF TXRX+MCU ISM ...
SI1056X-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 1.32A SOT...
SI1026-B-GMR Silicon Labs 3.61 $ 1000 IC RF TXRX+MCU ISM ...
SI1027-B-GM3R Silicon Labs 3.93 $ 1000 IC RF TXRX+MCU ISM ...
SI100 20G BTL 3M 9.91 $ 1000 SURFACT INSENSITIVE INSTA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics