Allicdata Part #: | SI1046X-T1-GE3TR-ND |
Manufacturer Part#: |
SI1046X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 0.606A SC89-3 |
More Detail: | N-Channel 20V 250mW (Ta) Surface Mount SC-89-3 |
DataSheet: | SI1046X-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-89-3 |
Package / Case: | SC-89, SOT-490 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 606mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.49nC @ 5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 66pF @ 10V |
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The SI1046X-T1-GE3 is a N-channel enhancement mode field effect transistor (FET). It is a type of transistor that uses an electric field to control the conductivity of a semiconductor. This transistor is designed for low-power applications and is characterized by low on-resistance, high-breakdown voltage, and low gate-source voltage. This device can be used in a wide range of applications such as amplifiers, switches, and power converters. It is also useful in automotive, industrial, and consumer electronics.
The working principle of a N-channel MOSFET is based on the electrostatic attraction between a gate and a source. When a voltage is applied to the gate, a voltage drop occurs between the gate and the source, causing an electric field between the two. This electric field attracts electrons from the source to the gate, causing a current to flow through the transistor and producing a pull-up or a pull-down effect, depending on the polarity of the voltage applied to the gate. The amount of current that can be pulled up or pulled down is determined by the resistance between the gate and the source.
The SI1046X-T1-GE3 has a threshold voltage of 1.8V and a maximum Rds(on) of 3.0 Ohms. This device also has a maximum drain to source voltage of 25V and a maximum drain current rating of 5A. For protection against over-voltage, the device is designed with current limiting and triple sensing thermal protection. The device is also rated for a Junction Temperature of 175°C.
The SI1046X-T1-GE3 can be used in a variety of applications, such as motor control circuits, DC to DC converters, power MOSFET drivers, and relay drivers. It can also be used in conjunction with power ICs and power management ICs, such as those used in switching mode power supplies. This device can be used in low-side switch applications by applying a voltage to the gate of the transistor.
Other applications for the SI1046X-T1-GE3 include high-side switches, load switches, battery protection circuits, and solenoid drivers. This device can also be used in digital logic gates or as part of an Astable Multivibrator circuit. Furthermore, the SI1046X-T1-GE3 can also be used in high-voltage applications, such as DC motor drivers, HID lamps, and automotive lighting.
The SI1046X-T1-GE3 is a versatile device with a wide range of uses. Its robust design and low on-resistance make it suitable for a variety of applications. The triple sensing thermal protection ensures a safe operation when in high load conditions, while the current limiting feature prevents current overload. This device is also easy to use, making it a good choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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