
Allicdata Part #: | SI1539DL-T1-GE3TR-ND |
Manufacturer Part#: |
SI1539DL-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V SC70-6 |
More Detail: | Mosfet Array N and P-Channel 30V 540mA, 420mA 270m... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Base Part Number: | SI1539 |
Supplier Device Package: | SC-70-6 (SOT-363) |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 270mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 590mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 540mA, 420mA |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI1539DL-T1-GE3 is a type of transistor array manufactured by Vishay, a global supplier of discrete semiconductors. This particular device is a MOSFET array that includes three MOSFETs in a single package. It is specifically designed for use in telecommunication applications.
The SI1539DL-T1-GE3 has a drain-source voltage of 38V and a maximum RDS(ON) of 155 mΩ. This makes it ideal for use in power- and energy-efficient applications. It also has a high-current capability, making it suitable for high-voltage, high-current applications such as those found in telecom applications. Additionally, the device has a very low profile, meaning it is able to fit in tight spaces when necessary.
The SI1539DL-T1-GE3 is used in a variety of telecommunication applications, such as switching and routing. In a typical telecom application, the device is used to switch or route signals from one point to another. It can be used to switch signals between two or more points, for example, between two or more optical fibers. Additionally, it is also used in power management applications, such as when regulating the power supply of a device.
The SI1539DL-T1-GE3 works by using the metal-oxide semiconductor field effect transistor (MOSFET) configuration. In this configuration, the source and the drain regions are positioned on either side of the gate oxide while the gate oxide is between the source and the drain regions. This enables the device to act as an electrically controlled switch by controlling the current between the source and the drain.
The MOSFET array configuration used in the SI1539DL-T1-GE3 makes it highly resistant to noise and spikes, making it ideal for use in noisy environments. Additionally, the device is able to operate at temperatures up to 85°C and is rated for a maximum operating frequency of 200 MHz. This makes the device able to perform in a wide variety of applications.
The SI1539DL-T1-GE3 is a highly versatile device, as it is able to perform a variety of tasks in a range of applications. It is specifically designed for use in telecom applications, but can also be used in a range of other applications, such as power management and switching. As such, the device is very useful in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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