
SI1563DH-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI1563DH-T1-GE3TR-ND |
Manufacturer Part#: |
SI1563DH-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 1.13A SC70-6 |
More Detail: | Mosfet Array N and P-Channel 20V 1.13A, 880mA 570m... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Base Part Number: | SI1563 |
Supplier Device Package: | SC-70-6 (SOT-363) |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 570mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 1.13A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.13A, 880mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI1563DH-T1-GE3 is a programmable high speed and low power transistor array designed to be used in various demanding applications. The SI1563DH-T1-GE3 is a high voltage n-channel device and features both single and dual transistor array. It is manufactured with the advanced high voltage semiconductor process and can withstand a total breakdown voltage of 33V with electrostatic, as well as thermal protection.
The programmable transistor array of the SI1563DH-T1-GE3 utilizes flexible control logic to precisely control the electrical characteristics, allowing for the purpose of making the design process easier and faster. Furthermore, its advanced on-chip programming feature makes it suitable for a wide variety of low voltage, high speed and low power applications. The SI1563DH-T1-GE3 is particularly useful when designing high performance circuit boards, such as clocks and PLLs, for high-speed digital systems. Additionally, the device has manufacturing overrun protection and on-chip voltage detectors which adds to its reliability.
The SI1563DH-T1-GE3 is able to work at both low and high frequency range and can operate in wide temperature range. Its maximum frequency range of the transistor array is below 15KHz. The transistor array can be operated at 0V to 22V range of supply voltage. The SI1563DH-T1-GE3 supports a wide variety of logic functions, such as logic inverter, logic buffer, logic gates and logic switches. It also supports a wide variety of low noise gate control as well as high speed interfaces. The SI1563DH-T1-GE3 has an integrated system clock which allows it to provide continuous scanning.
The working principle of the SI1563DH-T1-GE3 is based on a combination of metal-oxide-semiconductor field effect transistor (MOSFET) devices and logic control programming. The MOSFET devices contain two terminals, the drain and the source. The gate is used as an input terminal which controls the flow of electrons from the drain to the source. When the gate is high, the flow from drain to source is restricted, which decreases current and power and also increases speed. When the gate is low, the flow from drain to source is unrestricted and current and power increases. This can be used to create logic functions, such as logic gates, switches and buffers.
The SI1563DH-T1-GE3 is developed to be applied in such fields as medical equipment, automotive, industrial, test and measurement, and communications. It is ideal for high speed and low power applications, such as clocks and PLLs in high performance system-on-chip circuit boards. The SI1563DH-T1-GE3 is a highly reliable transistor array and its advanced on-chip programming also makes it suitable for a wide variety of low voltage, high speed and low power applications.
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