
Allicdata Part #: | SI1553CDL-T1-GE3TR-ND |
Manufacturer Part#: |
SI1553CDL-T1-GE3 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V SC70-6 |
More Detail: | Mosfet Array N and P-Channel 20V 700mA, 500mA 340m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.11000 |
10 +: | $ 0.10670 |
100 +: | $ 0.10450 |
1000 +: | $ 0.10230 |
10000 +: | $ 0.09900 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 700mA, 500mA |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 700mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 38pF @ 10V |
Power - Max: | 340mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 (SOT-363) |
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The SI1553CDL-T1-GE3 is an integrated circuit which is used in a lot of applications, including communications, ASICs, and data acquisitions.
As its name implies, the SI1553CDL-T1-GE3 is part of a family of integrated circuits combining a high performance N-channel junction field-effect transistor (JFET) array, with a low power, high gain, low offset voltage single transistor differential amplifier. This variety of integrated circuit enables multiple functions to be combined in a single package.
The SI1553CDL-T1-GE3 is specifically designed for low power applications, such as switching, buffering, and analog signal conditioning. Its highly integrated nature and low voltage operation makes it ideal for high speed, low power applications. It is an ideal choice for applications such as power management in mobile phones, medical, and computer systems, as well as a variety of industrial applications.
At the heart of the SI1553CDL-T1-GE3 is a FET array. The array consists of four N-channel junction field-effect transistors (JFETs). This type of device offers very low power dissipation, high gain, and highly, fast switching speeds. These features make it well suited to applications which must accommodate high frequencies and low power demands, such as in industrial, medical, and security systems.
The SI1553CDL-T1-GE3 also incorporates a low power, high gain, low offset voltage single transistor differential amplifier. This amplifier is used to convert single-ended input signals into differential output signals. The differential output signals offer increased signal fidelity, and increased reliability compared to single-ended signals. This feature is ideal for low power, high speed applications such as in communications and video systems.
In addition to its FET array and differential amplifier, the SI1553CDL-T1-GE3 has a variety of features which make it a highly applicable choice for low power applications. These features include a high bandwidth wide supply voltage range and a wide input signal range. It also includes a wide range of output gain options ranging from 0.05 to 1.07VP-P.
The SI1553CDL-T1-GE3 is an ideal choice for a wide range of applications. It is highly applicable to communications, medical, security and industrial systems. Its highly integrated nature and low voltage operation make it ideal for low power, high speed applications. It is also ideal for applications requiring single-ended to differential signal conversion and low power signal conditioning.
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