SI1551DL-T1-E3

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Base Part Number:	SI1551
Supplier Device Package:	SC-70-6 (SOT-363)
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	270mW
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	1.9 Ohm @ 290mA, 4.5V
Current - Continuous Drain (Id) @ 25°C:	290mA, 410mA
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI1551DL-T1-E3 is an array of four MOSFET transistors designed to provide transistor array functions for various integrated circuits. This transistor array is a general-purpose V-MOS power transistor. It features a voltage rating of 15V and a current rating of 1A. It is also designed for use with a variety of dc, ac, or PWM impedance matching circuits.The SI1551DL-T1-E3 includes all the necessary gate and source drive circuitry. This design allows it to be used as a simple switch, as a current switch, or in combination with other logic components to achieve very complex functions. It also supports a wide range of voltage and current requirements and provides excellent signal isolation.The working principle of the SI1551DL-T1-E3 is similar to that of all MOSFET transistors. It consists of a source, a drain, a gate and a body. When a voltage is applied to the gate, it attracts the free electrons from the source to the body, creating a channel between the source and the drain. This results in a current flow from the source to the drain. The transistor remains in an \'on\' state as long as there is a voltage present on the gate. When the gate voltage falls below a certain level, the transistor turns \'off\'. This action allows current to flow only when a voltage is applied to the gate.The SI1551DL-T1-E3 is widely used in many electronic applications. These include communication and networking, industrial automation, and automotive applications. It is particularly useful for applications requiring higher current handling capabilities and greater signal isolation. This transistor is also used for high-speed switching, frequency modulation and driving a variety of motors. In addition, the SI1551DL-T1-E3 can be used in RF circuits that require frequency stability and low noise.The SI1551DL-T1-E3 can be used in a variety of applications including high-frequency switch mode power supplies and power amplifiers. It is also suitable for use in high voltage and high current operation. It is an ideal choice for applications such as RF switching, pulse modulation, audio switching and pulse generation. In addition, it is suitable for use in current sensing, temperature sensing, and voltage sensing applications.The SI1551DL-T1-E3 is an excellent example of modern transistor technology. Its array structure provides users with all the necessary gate and source drive circuitry, allowing it to be used as a simple switch, as a current switch, or it can be combined with other logic components to achieve very complex functions. Its low power consumption, high frequency stability and long service life make it a great choice for a wide range of applications.

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