SI1553DL-T1-GE3 Allicdata Electronics

SI1553DL-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI1553DL-T1-GE3TR-ND

Manufacturer Part#:

SI1553DL-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V SC70-6
More Detail: Mosfet Array N and P-Channel 20V 660mA, 410mA 270m...
DataSheet: SI1553DL-T1-GE3 datasheetSI1553DL-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1553DL-T1-GE3 is a type of transistor switch array specialized for high-speed optical communication networks. With its excellent electrical characteristics, including a maximum switching time of 15 nanoseconds, and an off resistance of up to 15 kilohms, it has become an increasingly popular choice for application in many industries.

The SI1553DL-T1-GE3 is an array of transistors and FETs (field effect transistors). Transistors are electronic devices that control the flow of electrical signals, while FETs are semiconductor devices that use an electric field to control the flow of electrical signals. The array of transistors and FETs used in the SI1553DL-T1-GE3 is configured to provide low-power, high-speed switching for optical communication networks.

The SI1553DL-T1-GE3 utilizes a special implementation of the Gate-Drain-Source (GDS) architecture, which provides several advantages over traditional transistor switch arrays. In traditional switch arrays, transistors are connected in series or parallel networks, but in the GDS architecture, each individual transistor is connected to an independent gate-drain-source network. This allows the transistors to be individually switched on or off, resulting in faster switching times and higher off resistance.

The SI1553DL-T1-GE3 is designed to be compatible with most optical communication systems, and is often used in high-speed networking applications such as Ethernet and FC. The low-power switching characteristics of the device make it ideal for use in high-speed optical communications systems, as lower power consumption translates into improved signal transmission quality.

The SI1553DL-T1-GE3\'s switching speed is further enhanced by its use of a wide range of power-saving features, including a low-power consumption idle mode and a dynamic power-down mode. In addition, the SI1553DL-T1-GE3 also offers an adjustable signal threshold (AST) feature, which allows users to optimize their system\'s signal transmission performance.

The SI1553DL-T1-GE3 is an ideal choice for applications that require low-power, high-speed switching for optical communication networks. Its advanced GDS architecture, low-power consumption, adjustable signal threshold, and efficient switching capabilities make it an ideal solution for many industries.

The specific data is subject to PDF, and the above content is for reference

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