SI1553DL-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1553DL-T1-E3TR-ND

Manufacturer Part#:

SI1553DL-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V SC70-6
More Detail: Mosfet Array N and P-Channel 20V 660mA, 410mA 270m...
DataSheet: SI1553DL-T1-E3 datasheetSI1553DL-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 385 mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1553DL-T1-E3 is an advanced, low-capacitance, low-on-resistance, and high-speed CMOS array gate-driver. It is designed to improve the performance of gate-drivers with high power dissipation. The SI1553DL-T1-E3 is a three-channel array driver that is capable of driving one channel for logic level input signals, one channel for slew rate control, and one channel for driving the gate of an N-channel MOSFET. The SI1553DL-T1-E3 has the ability to drive resistive and capacitive loads and can be used in applications such as digital power supplies, industrial automation and control, and high-speed serial data links.

The main application field of the SI1553DL-T1-E3 is power converters and power communication applications. It can also be used in general-purpose digital logic as well as medical and automotive applications. The SI1553DL-T1-E3’s low capacitance, low-on resistance, and high-speed characteristics make it ideal for driving high frequency switching applications such as power management ICs and motor control circuits.

The working principle of the SI1553DL-T1-E3 is based on the concept of field-effect transistor (FET) array technology. The device is designed to provide effective control of two or more FETs in a single package, without the need for additional circuitry or components. The SI1553DL-T1-E3 is capable of driving the gates of two to four FETs, with the option of adding an additional external pull-up resistor or buffer. This allows the device to drive FET gates of differing properties and different sizes. The SI1553DL-T1-E3 also features a slew rate control function, which allows the user to control the rate at which power is applied to the FET gate. This helps to ensure that the gate can be driven quickly and smoothly, helping to reduce the power dissipation associated with switching applications.

The SI1553DL-T1-E3 is designed to improve the performance and power dissipation of gate drivers. It provides an array of FETs that can be precisely controlled with a low capacitance, low-on-resistance and high-speed CMOS array gate-driver. The array gate-driver is ideal for applications such as digital power supplies, industrial automation, and high-speed serial data links. The device’s low capacitance, low-on-resistance and high-speed characteristics make it ideal for driving high frequency switching applications such as power management ICs and motor control circuits. The SI1553DL-T1-E3 is also suitable for applications that require precise, low-capacitance gate control and high-speed switching.

The specific data is subject to PDF, and the above content is for reference

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