SI1557DH-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1557DH-T1-E3-ND

Manufacturer Part#:

SI1557DH-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 12V 1.2A SC70-6
More Detail: Mosfet Array N and P-Channel 12V 1.2A, 770mA 470mW...
DataSheet: SI1557DH-T1-E3 datasheetSI1557DH-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 470mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Description

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The SI1557DH-T1-E3 is a MOSFET array from Vishay. This device is usually used in various fields such as industrial and automotive applications. It is designed to provide excellent power handling and thermal performance. Furthermore, it also offers a low Rdson rating which allows for an efficient power consumption.

The basic working principle of SI1557DH-T1-E3 is the same as any other MOSFET. This array utilizes a metal-oxide-semiconductor field effect transistor (MOSFET) as the main operating element. This type of field effect transistor is equipped with a gate, source and drain electrodes. In order to switch the MOSFET on and off, the voltage applied to the gate terminal is increased and decreased. The voltage applied to the gate determines the amount of current that is allowed to flow through the source-drain path.

The advantage of the SI1557DH-T1-E3 is that it is a fast switching device with a low gate charge. Moreover, these devices can handle exceptionally high peak currents and have a low thermal resistance. They are also highly reliable and have the ability to withstand short or long duration pulses. The array has been designed with a variety of different layouts available for a variety of applications.

In applications such as power conversion, RF switching, audio systems and motor control, the SI1557DH-T1-E3 can prove to be an effective solution. This device is capable of providing high power levels with minimal heat dissipation. It also has the added advantage of easily connecting to integrated circuits and control devices. This allows for the integration of multiple circuits, allowing the manufacturer to accommodate a wide range of applications.

In addition, the SI1557DH-T1-E3 can be used as an alternative to transistors in some applications where transistors aren\'t necessary. This device has much lower on-resistance than comparable transistors, thereby reducing the amount of power used. Furthermore, it is also more reliable as it doesn\'t suffer from the same issues that transistors experience such as latchup, noise and gain roll off. In cases where large peak currents are required, the array is also capable of providing short duration pulses with minimal power loss.

In conclusion, the SI1557DH-T1-E3 is a versatile, fast switching MOSFET array. It provides excellent power handling and thermal performance, as well as a low Rdson rating. It can be used in a variety of industrial and automotive applications, such as power conversion, RF switching, audio systems, motor control and more. It is more reliable than transistors and is capable of providing high peak currents. This makes it an ideal solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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