SI1551DL-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1551DL-T1-GE3TR-ND

Manufacturer Part#:

SI1551DL-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V SC70-6
More Detail: Mosfet Array N and P-Channel 20V 290mA, 410mA 270m...
DataSheet: SI1551DL-T1-GE3 datasheetSI1551DL-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Base Part Number: SI1551
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI1551DL-T1-GE3 is a device from Nexperia\'s array family, which has many applications and is versatile in use. In general, array devices contain many transistors or MOSFETs that are connected together in a similar manner as integrated circuits.

The SI1551DL-T1-GE3 belongs to a subset of transistors and MOSFETs – namely FETs or Field Effect Transistors. FETs are so named because they operate on the principle of behaviour of an electric field to control the current flow between the source and drain terminals. The geometry of the device makes it highly efficient in controlling higher frequency currents.

The specific application area of the SI1551DL-T1-GE3 is mainly switching circuits, although it also offers very different options. Characteristics such as high frequency operation, high peak currents and lower on-resistance make it suitable for a wide range of other applications.

In terms of its working principle, FETs are basically three-terminal devices. The source terminal is the negative pole and the drain terminal is the positive pole. Their input is provided by a Gate terminal which creates a field that governs the behavior of the charge carriers in between the source and drain terminals. The field effect acts as an electronic switch which either permits or restricts the carriers from flowing between the source and drain.

The SI1551DL-T1-GE3 is composed of many interconnected FETs. The power of the device is determined by its switching speed, on and off resistance, as well as its peak current capabilities. It can be used to control and switch any type of signal, from very high to very low frequencies. The device also offers the possibility to adjust its output voltage and current capability.

Due to its ability to switch high frequencies with high efficiency, the SI1551DL-T1-GE3 is an excellent choice for use in low power applications. It is an ideal device for applications such as power supply designs, signal switching, digital signal processing, as well as for high frequency switching circuits.

In conclusion, the SI1551DL-T1-GE3 belongs to a subset of transistors and MOSFETs – namely FETs or Field Effect Transistors. It is mainly used in switching circuits, but it also offers other applications due to its characteristics such as its high frequency operation, high peak currents and lower on-resistance.

The specific data is subject to PDF, and the above content is for reference

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