SI3410DV-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 4.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1295pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	19.5 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SI3410DV-T1-GE3 is a single-gate enhancement-mode Field-Effect Transistor (FET) that is commonly used as a switch operating in the enhancement mode at voltages between 2.5V and 20V. When integrated into a circuit, this FET can be used to reduce power consumption while preserving the make-break cycle of a signal path. This is made possible by allowing electrical charge carriers to move or remain in a fixed location on the surface of the substrate, creating a high resistance paths and thus permitting signal paths to become insulated from the ground.SI3410DV-T1-GE3 is a great choice for a variety of applications, including power management, adjustable switching, logic level control, signal processing and signal switching. For example, many motor control applications require a number of power switchings on and off rapidly. The SI3410DV-T1-GE3 can be used as a power switch by providing a high on-state impedance, low leakage current and low on-resistance. This FET can be used as a switch for automotive applications, medical diagnostic equipment, and in electronics related applications.Furthermore, the SI3410DV-T1-GE3 works with a low threshold voltage and hold-off voltages. This allows the circuit designer to operate the FET with a small voltage difference between the on and off states, making it a highly efficient and efficient product. On-state impedance is also low and current leakage and on-state resistance are also very low.The SI3410DV-T1-GE3 can be used for two types of operation: P-Channel and N-Channel. P-Channel type FETs creates a path to allow current conduction from the source to the drain when a positive voltage is applied to the gate. On the other hand, N-Channel type FETs creates a path to allow current conduction from the source to the drain when a negative voltage is applied to the gate.The SI3410DV-T1-GE3 features ESD protection, which provides a maximum of 8A transient current and 1.5A reverse current. This provides a considerable assurance of product integrity since it allows the designer to reduce ESD related damage, which could occur due to external shocks caused by electrostatic charges. In addition, its low-profile, space-saving and pop-eyed-shaped topology allows it to integrate several FETs into a single package.In summary, the SI3410DV-T1-GE3 is a suitable solution for applications where low power consumption and relatively good performance are of prime importance. It provides low static power consumption, low on-state resistance, and low threshold voltage, enabling efficient and fast switching performance, and low current leakage. It can also be used as a switch in a variety of electrical, automotive and medical applications. It also provides ESD protection, which further strengthens its product integrity. The low-profile, space-saving and pop-eyed-shaped topology further make it an attractive solution for many applications.

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