Allicdata Part #: | SI3445ADV-T1-GE3-ND |
Manufacturer Part#: |
SI3445ADV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 8V 4.4A 6-TSOP |
More Detail: | P-Channel 8V 4.4A (Ta) 1.1W (Ta) Surface Mount 6-T... |
DataSheet: | SI3445ADV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 5.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI3445ADV-T1-GE3 is a p-channel enhancement-mode field-effect power transistor (FET). This transistor is designed to minimize on-state resistance while providing superior switching performance in applications where low gate-charge is essential. Advanced TrenchFET technology enables this process to reduce the on-state resistance in combination with a reliable avalanche and dv/dt rating.
The SI3445ADV-T1-GE3 is a static switch suitable for use in applications such as load and line supervision, power leveling in dc–dc converters or battery backup in Hot Swap applications. It offers low RDS(on) and a fast switching time and is thus ideal for high speed, low power applications. The transient dissipation capability helps to minimize switching losses and minimize power management design complexity.
The SI3445ADV-T1-GE3 has a drain-source voltage rating of 10V, a drain current rating of 7.12A and a maximum power dissipation of 1.39W. In order to provide superior performance, the ESD rating is 8kV. It is available in a TO-252 (DPAK) package.
The SI3445ADV-T1-GE3 belongs to the family of single-gate FETs and is designed to meet the demands of high-performance power management applications. Its combination of low RDS(on), fast switching speeds and high current ratings makes it ideal for use as a low-side switch in power management designs. Its integrated ESD protection ensures a reliable operation even in harsh environments.
The working principle of the SI3445ADV-T1-GE3 is based on the fact that it has a very wide “gate to source” region. When a source is applied to the gate, electrons from the gate are attracted to the source, which creates a depletion region. This depletion region impedes the flow of electrons from the drain to the source and allows for the transistor to be “off”. When electrons are not attracted to the gate, the transistor will be “on”, allowing current to flow freely.
The SI3445ADV-T1-GE3 is suitable for use in a variety of applications including:
- DC-DC converters
- Power leveling
- Battery backup in Hot Swap applications
- Load and line supervision
- Automotive applications
The SI3445ADV-T1-GE3 is designed to be robust and reliable, and is ideal for any application requiring high performance and low power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI3445ADV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 4.4A 6-TSO... |
SI3445DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 6-TSOPP-Ch... |
SI3402-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 4A S... |
SI3404-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 5.8A... |
SI3434-TP | Micro Commer... | 0.06 $ | 1000 | MOSFET N-CHANNEL 30V 5A S... |
SI3493DDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CHANNEL 20V 8A 6... |
SI3400A-TP | Micro Commer... | 0.11 $ | 3000 | N-CHANNEL,MOSFETS,SOT-23 ... |
SI3443DVTR | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4.4A 6-TS... |
SI3442DV | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 4.1A SSOT... |
SI3443DVTRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4.4A 6-TS... |
SI3475DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 0.95A 6-... |
SI3407DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 8A 6-TSOP... |
SI3410DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8A 6-TSOP... |
SI3424BDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 8A 6TSOPN... |
SI3424DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 5A 6-TSOP... |
SI3433BDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.3A 6-TS... |
SI3434DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.6A 6-TS... |
SI3441BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.45A 6-T... |
SI3445ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 4.4A 6-TSO... |
SI3445DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 6-TSOPP-Ch... |
SI3446ADV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 6A 6-TSOP... |
SI3447BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 4.5A 6-TS... |
SI3451DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 2.8A 6-TS... |
SI3454ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 3.4A 6TSO... |
SI3454CDV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.2A 6TSO... |
SI3454CDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.2A 6TSO... |
SI3455ADV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 2.7A 6TSO... |
SI3456BDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.5A 6-TS... |
SI3456CDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 7.7A 6TSO... |
SI3456CDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 7.7A 6TSO... |
SI3457BDV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 3.7A 6-TS... |
SI3460DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 5.1A 6TSO... |
SI3473DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 5.9A 6-TS... |
SI3481DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 4A 6-TSOP... |
SI3483DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 4.7A 6-TS... |
SI3493DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3493DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3495DV-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.3A 6-TS... |
SI3424DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5A 6-TSOP... |
SI3433BDV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.3A 6-TS... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...