Allicdata Part #: | SI3443DVTRPBFTR-ND |
Manufacturer Part#: |
SI3443DVTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 4.4A 6-TSOP |
More Detail: | P-Channel 20V 4.4A (Ta) 2W (Ta) Surface Mount Micr... |
DataSheet: | SI3443DVTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | Micro6™(TSOP-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1079pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI3443DVTRPBF is a N-channel power MOSFET often used in power electronics and other applications such as switching, power amplifier and motor control. It is also a vertical double-diffused MOSFET (VDMOS) which offers higher drain-source voltage, lower gate-source voltage, and greater power handling capabilities.
Application Field
The SI3443DVTRPBF is primarily used in power electronics. Due to its VDMOS structure, the MOSFET can handle higher currents with less power dissipation. This makes it suitable for applications such as high speed switching, power amplifiers for audio, and motor controllers. The device also has a high frequency operation range up to 300GHz, so it is suitable for high frequency applications as well.
Working Principle
The SI3443DVTRPBF consists of a N-channel MOSFET in the depletion type. It has a vertical structure with double diffused junctions, so its breakdown voltage is higher than the traditional single-diffused MOSFETs. The source and drain terminals are connected to the source and drain regions of the transistor, respectively. The gate terminal when open allows current to flow between the source and drain terminals.
The device operates by allowing electrons to pass through the N-channel MOSFET when a voltage difference exists between the source and drain terminals. The voltage applied to the gate terminal determines the amount of current that can pass through the device. When the voltage applied to the gate is positive then the device is "on" and current can flow from the source to the drain terminal, and when the gate voltage is negative then the device is "off" and the current is blocked.
The device also has a body diode which is connected between the source and drain. This body diode helps protect the transistor from back-biasing when a negative voltage is applied to the drain. It also helps reduce the amount of electrical noise present in the signal path due to the "body effect" caused when the voltage and current are pushed in opposite directions through the MOSFET. This effect is reduced in the vertical double-diffused MOSFETs compared to the single-diffused MOSFETs.
Bottom Line
The SI3443DVTRPBF is a N-channel power MOSFET used in power electronics and other applications. It is a vertical double-diffused MOSFET (VDMOS) which offers superior performance when compared to other MOSFET designs. Its high frequency operation range allows it to be used in high frequency applications such as switching and power amplification. The device also has a body diode which helps protect the transistor from back-biasing and reduce electrical noise in the signal path.
The specific data is subject to PDF, and the above content is for reference
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