SI3415-TP Allicdata Electronics
Allicdata Part #:

SI3415-TPMSTR-ND

Manufacturer Part#:

SI3415-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: MOSFET P-CH 20V 4A SOT-23
More Detail: P-Channel 20V 4A (Ta) 350mW (Ta) Surface Mount SOT...
DataSheet: SI3415-TP datasheetSI3415-TP Datasheet/PDF
Quantity: 3000
3000 +: $ 0.05027
6000 +: $ 0.04525
15000 +: $ 0.04022
30000 +: $ 0.03771
75000 +: $ 0.03352
Stock 3000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI3415-TP is a device known as an enhancement-mode Power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). This type of transistor is electrically controlled and is composed of a source, a drain and a gate, which when combined, forms an electronic switch. The SI3415-TP has a drain-source voltage of 30 volts and a drain current of 2.2 amperes. It also has a maximum operating temperature of 125°C, a gate-source voltage of -4 to +12 volts, and a maximum drain-source on-state resistance of 26.3 ohms. The SI3415-TP was designed to facilitate high-speed switching in applications such as switching regulators, power converters and power amplifiers, and relay and motor control circuits.

The basic working principle of a MOSFET is fairly straightforward. When the gate is driven by a current source, it creates a potential difference between the gate and the source, which creates an electric field. This electric field, in turn, creates a “channel” of electrons between the source and the drain, which is known as the the “channel.” The channel is what enables the current to flow when the gate voltage is sufficient. When the gate voltage is not sufficient, the electrons will not be able to move and the gate-source voltage will be close to zero. In this state, the transistor is “off.”

The SI3415-TP is an ideal device for high-frequency power applications due to its low on state resistance and high switching speed. Furthermore, the device is specifically designed for low gate charge applications to reduce switching power losses. This makes the device particularly suitable for high-speed switching regulator applications and high-power dc/dc converters.

The SI3415-TP is also an ideal device for automotive relay and motor control circuits due to its high drive capability and low on-state drain-source resistance. Additionally, the device is AEC-Q100 automotive grade qualified and capable of operation over a temperature range of -40°C to 125°C. This makes the device particularly well-suited for automotive applications where the device must be able to withstand the harsh temperatures that are typical of the automotive environment.

The SI3415-TP is a highly reliable and robust device, making it an ideal choice for a variety of applications. Its low on-state resistance and high switching speed make it an ideal choice for power applications such as switching regulators, power converters and power amplifiers. Additionally, its high drive capability and automotive grade qualification make it an ideal choice for automotive relay and motor control circuits or any other applications requiring a reliable, robust, and heat-resistant device.

The specific data is subject to PDF, and the above content is for reference

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