SI3447BDV-T1-E3

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The SI3447BDV-T1-E3 is a N-channel enhancement mode MOSFET transistor that is used in a variety of industrial electronics and high-powered electronic applications. The transistor has a design that allows it to be used as a trigger switch for high voltage and high current supply switching. It also has several features that make it an ideal choice for high power electronic applications.

In terms of its application field, the SI3447BDV-T1-E3 is most commonly used for DC control, LED lighting, and switching applications. It can also be used in audio applications, where it can provide high power switching, and in low voltage DC switching applications. Additionally, the SI3447BDV-T1-E3 can be used in automotive applications, where it can provide high efficiency switching.

The working principle of the SI3447BDV-T1-E3 is based on its N-channel MOSFET technology, where gate voltage and channel current are used to control the flow of current through the transistor. When voltage levels are applied to the gate of the transistor, it creates an electric field between the gate and drain. When the applied voltage is greater than the threshold voltage, usually 4 volts, the electromagnetic field will cause the drain and source to remain in a "on" state. To turn the transistor off, the gate voltage is reduced below the threshold voltage.

The SI3447BDV-T1-E3 is designed to operate in a wide range of currents, and is capable of carrying currents up to 100A. It also features a low on-resistance of 0.0025 Ohm, which makes it ideal for high power applications. Additionally, it has a very low on-resistance to gate charge ratio, making it an excellent choice for pulse width modulation applications.

In terms of electrical performance, the SI3447BDV-T1-E3 has a 6V breakdown voltage, and a 12V operating voltage. Additionally, it has a maximum drain current of 120A and a maximum continuous drain voltage of 55V. It also has a very low total gate charge (Qgd) of less than 2.6nC. This makes the SI3447BDV-T1-E3 an excellent choice for applications where very low Qgd is required.

Lastly, the SI3447BDV-T1-E3 has a very small form factor, which makes it a great choice for applications where space is at a premium. It is also compatible with a variety of IC packages, including TO220, TO262, and others. This makes it an excellent choice for prototyping, as well as for production use.

In conclusion, the SI3447BDV-T1-E3 is a versatile N-channel enhancement mode MOSFET transistor that is ideal for high power electronic applications. Its low on-resistance, small form factor, and compatibility with a variety of IC packages makes it a great choice for any high performance electronics application.

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