| Allicdata Part #: | SI3454CDV-T1-E3-ND |
| Manufacturer Part#: |
SI3454CDV-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 4.2A 6TSOP |
| More Detail: | N-Channel 30V 4.2A (Tc) 1.25W (Ta), 1.5W (Tc) Surf... |
| DataSheet: | SI3454CDV-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | 6-TSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta), 1.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 305pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.2A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI3454CDV-T1-E3 is a field effect transistor (FET) and part of a series of products manufactured by Siliconix, a semiconductor company based in California. The SI3454CDV-T1-E3 is a single MOSFET transistor and is used in a variety of applications, such as low voltage and logic level signal transfer, signal switching, AC or DC amplification, and DC to DC conversion.A MOSFET is a type of FET that is divided into two distinct operation modes: enhancement-mode and depletion-mode. In enhancement-mode, the transistor is constantly off and only turns ‘on’ when a certain voltage is supplied across the gate and source. This voltage is known as the gate threshold voltage. The transistor then remains ‘on’ as long as the gate voltage is above the threshold voltage. In depletion-mode, the transistor is constantly ‘on’, and the application of a voltage across the gate and source will reduce the drain-to-source current and turn the transistor ‘off’.The SI3454CDV-T1-E3 is an enhancement-mode MOSFET. It is characterized by a low gate threshold voltage and a high input capacitance, which makes it ideal for switching applications in which very low power consumption is preferred. Additionally, this MOSFET transistor has a maximum drain-to-source voltage rating of 18V and a maximum drain current rating of 2.6A, making it suitable for transmitting, amplifying, and controlling low voltage and logic level signals.The SI3454CDV-T1-E3 is commonly used in applications involving low voltage and logic level signal transfer, signal switching, AC or DC amplification, and DC to DC conversion. It has a variety of uses including motor control and driving, communication interface circuitries, inverters, open drain and open collector circuits, and as a power switch. Additionally, this MOSFET transistor is also used in other applications such as in audio amplifiers, low voltage power supplies, and in battery powered electronic devices.In conclusion, the SI3454CDV-T1-E3 is a single enhancement-mode MOSFET transistor manufactured by Siliconix. It is characterized by its low gate threshold voltage, high input capacitance, and its maximum drain-to-source voltage and current ratings. It is used in a variety of applications including signal transfer and switching, AC or DC amplification and conversion, motor control, and audio amplifiers, among others.
The specific data is subject to PDF, and the above content is for reference
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SI3454CDV-T1-E3 Datasheet/PDF