SI3473DV-T1-E3

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The SI3473DV-T1-E3 is part of a family of high-voltage, high-performance, Enhancement Mode (E-mode) Field Effect Transistors (FETs). It is fabricated using advanced tandem trench process to ensure consistent and repeatable performance. This device is designed to meet the needs of high efficiency, high accuracy, and high voltage applications. This device is ideal for use in high power switching applications.

In a typical application, the SI3473DV-T1-E3 can be used as a power switch in an industrial or home automation system. The E3 features a short channel, high voltage (Vds) enhancement mode FET. This is an insulated gate FET, or IGFET, which is an insulated gate field effect transistor (IGFET). When a voltage is applied to the gate of the device, it creates an electric field that attracts charge carriers to create a conducting channel between the drain and the source. This channel of electrons controls the flow of current from the drain to the source.

The device is rated to an avalanche drain-source voltage of up to 600V with an enhanced diode breakdown voltage of up to 650V. It has a maximum drain current of 8 amps continuous, and a drain-source on-resistance of only 4.5 ohms. These features make it ideal for use in a variety of applications.

In addition to its high voltage and current characteristics, the SI3473DV-T1-E3 has a low gate threshold voltage, which is useful for controlling the power switch. The threshold voltage is the voltage required to open the FET gate, resulting in a controlled current flow between the drain and source. This low gate threshold voltage makes the SI3473DV-T1-E3 suitable for use in applications where a small gate voltage is desired.

The device is also designed for use in high temperature environments, with an operating temperature range of -55 to 150 degrees Celsius. This makes it suitable for use in industrial environments where high levels of heat dissipation can be encountered.

The E3 also provides fast switching capabilities, with a switching time of 1.5 ns typ. This quick switching time allows it to be used in applications which require fast switching of power.

Due to its excellent performance in high voltage, current, and temperature applications, the SI3473DV-T1-E3 is an ideal solution for a wide variety of applications, including those in the industrial and home automation markets. This device is well-suited for switching power in control systems, in appliances, and in telecommunication systems, in addition to its other applications.

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