SI3900DV-T1-E3

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The SI3900DV-T1-E3 is a three-stage MOSFET array from Siliconix, Inc., an American transistor and integrated circuit manufacturer. This device is optimized to operate with a narrow gate drive, thereby ensuring fast switching and low power consumption. It offers excellent low-noise performance, low-on-resistance, low saturation voltage, and a wide input common mode voltage range. This array is ideal in applications requiring low voltage, high speed, high current, and/or low power.

The SI3900DV-T1-E3 features three cascaded MOSFETs in one package. It has a wide differential input voltage range of -5.5 to -26V, allowing a wide variety of applications. The output is also quite wide, ranging from -10V to +170V. The array is especially well-suited for applications such as motor control, DC-to-DC conversion, and power switching.

Due to the inherent structure of the MOSFET array, it can provide operation at low-voltage and high-speed. This feature makes the SI3900DV-T1-E3 ideal in applications where a high current and fast switching are essential, such as motor control, power switching, and DC-to-DC conversion. The low input common-mode range allows for noise immunity and low-distortion signals, and the small overall package size decreases system cost by reducing the required number of components.

The working principle of the SI3900DV-T1-E3 is based on the principle of responding to a voltage differential input. It utilizes N-channel MOSFETs with the respective drain and source separated from each other. The input voltage is applied between the drain and source terminals and allows current to pass freely between them. The output is obtained from the voltage differences between the output and ground terminals.

When the voltage between the two terminals increase or decreases, the gate-source voltage determines if the current passes or not. A reversed biased gate-source voltage will block current flow across the MOSFET, while forward biased gate-source voltage will allow current to pass. The output of the SI3900DV-T1-E3 is directly proportional to the differential voltage of its inputs.

The SI3900DV-T1-E3 is capable of providing high-frequency operation and operating at high temperatures. This makes this array suitable for applications where low power consumption and high data rates are essential. Furthermore, its high current capability makes it suitable for driving large motors and providing DC-to-DC conversion.

The SI3900DV-T1-E3 array from Siliconix is an excellent choice for a variety of applications. It is able to provide high-speed operation, low power consumption, and high current capabilities for many applications. Its small size and wide input common mode voltage range make it suitable for applications with noise immunity and low distortion. In addition, it is able to operate at high temperatures, making it ideal for applications requiring robust and reliable performance.

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