Allicdata Part #: | SI3983DV-T1-GE3-ND |
Manufacturer Part#: |
SI3983DV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 2.1A 6-TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.1A 830mW Sur... |
DataSheet: | SI3983DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Base Part Number: | SI3983 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI3983DV-T1-GE3 is a Trench MOSFET transistor array with low output capacitance and low on-state resistance. It is a versatile, extremely high voltage part that is optimized for use in high frequency power switching applications such as inverters, boost converters, and ac/dc converters. This MOSFET transistor array is capable of conducting large currents and is capable of switching at very high frequencies without significant performance degradation. Its high switching speed helps reduce overall system size and cost.
The SI3983DV-T1-GE3 MOSFET transistor array can be used in a wide range of applications where high voltage, high speed switching and low on-state resistance are important. It is ideal for use in automotive, industrial, and medical applications such as power converters and power systems. It is also suitable for use in various wireless applications such as wireless power transfer, wireless charging, and wireless communication.
The working principle of the SI3983DV-T1-GE3 is based on the use of a "trench" process to construct the device. The trench process is a type of vertical fabrication method wherein the transistor structure is formed in a trench etched in the substrate. The vertical construction minimizes leakage current and allows for higher current carrying capacity. The device uses heavily doped source/drain anodes and thick gate oxide in order to minimize switching losses and increase the speed of operation.
The SI3983DV-T1-GE3 offers improved switching performance over traditional MOSFETs due to its low input capacitance, low on-state resistance, and high switching speed. This makes it an ideal choice for high frequency power switching applications. It also has excellent thermal capabilities, which helps to ensure reliable performance over long operating hours.
The SI3983DV-T1-GE3 is an excellent choice for high voltage, high speed switching applications. It provides improved performance over traditional MOSFETs, allowing for high power density, low on-state resistance, and fast switching performance. It is suitable for use in a variety of automotive, industrial, and medical applications, and offers excellent thermal capability to ensure reliable performance.
The specific data is subject to PDF, and the above content is for reference
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