SI3948DV-T1-E3

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The SI3948DV-T1-E3 is a 3-terminal low-voltage power discrete MOSFET device which is ideally suited for use in efficient power-switching designs. It is a complete and unique chipset consisting of three logic-level N-channel field effect transistors connected in a Darlington array, providing a low RDS(ON) and guaranteed large voltage gain.The logic level/high-performance power MOSFET combination provides high switching speed, good power efficiency and small thermal footprint.

Application Field

The SI3948DV-T1-E3 is suitable for a variety of applications, such as pulse width modulation, general DC/DC circuits, DC/AC circuits and switching regulators. It has the characteristics of low drain-source on-resistance, fast turn-on and turn-off times and accurate temperature coefficient. It is also applicable in voltage regulator circuits, DC-DC converters, dc drivers and power management applications.

Working Principle

The SI3948DV-T1-E3 is an integrated three-terminal N-channel power MOSFET device. This device is configured as a Darlington array, which allows the device to reduce turn on and turn off times, saving power in the process. The SI3948DV-T1-E3 also combines the advantages of both a logic-level power MOSFET and a high-performance power MOSFET, giving it excellent switching speed, power efficiency, and a small thermal footprint. It has low drain-source on-resistance, fast turn-on and turn-off times and a low temperature coefficient. The device is also monitored by an independent threshold detection circuitry that adds extra protection against over-voltage and over-current conditions.

The SI3948DV-T1-E3 can be operated in applications where both pulse width modulation and dc/dc are used. It is generally used in high-efficiency power supply designs, as it can provide more accurate control of power at small load steps and low power consumption. The device also has excellent thermal performance, as it dissipates a fraction of the heat generated by traditional MOSFET devices.

Conclusion

The SI3948DV-T1-E3 is a three-terminal low-voltage power discrete MOSFET device that efficiently switches and controls power in a wide range of applications. Because of its properties, the SI3948DV-T1-E3 can provide improved control of power at small load steps and low power consumption, with excellent thermal performance, fast switching times and accurate temperature coefficient.

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