Allicdata Part #: | SI3951DV-T1-GE3-ND |
Manufacturer Part#: |
SI3951DV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 2.7A 6-TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.7A 2W Surfac... |
DataSheet: | SI3951DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SI3951 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5.1nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 115 mOhm @ 2.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI3951DV-T1-GE3 is a multi-channel, non-amplifier FM power amplifier array, ideal for a variety of applications. It is designed to operate up to three channels independently with a supply voltage ranging from 10V to 80 V. This product utilizes advanced process technology to improve linearity, provide a wide frequency band, and reduce size. The SI3951DV-T1-GE3 is available in a variety of packages that differ in output current and thermal performance. It is designed for use in automotive, audio, portable, and industrial applications.
At the heart of the SI3951DV-T1-GE3 is an array of 30 field-effect transistors (FETs). Each FET has a drain, a source, and a gate. The gate is the control element of the transistor, and it is used to create an amplified current signal by manipulating the drain-source voltage. The gate is typically driven by an external signal, such as an audio signal fed into a tweeter or woofer. The SI3951DV-T1-GE3 is connected to the signal source through two paths: the drain-source path and the gate-source path. The drain-source path provides the amplifying action, while the gate-source path serves to control the gates of the FETs. The gates are configured as an array with each FET individually adjusted. This provides a more precise control of the signal current.
The SI3951DV-T1-GE3 offers a very efficient design, which makes it an excellent choice for use in automotive, audio, portable and industrial applications. The FETs of the array produce an output current that is proportional to the signal voltage. This allows the amplifier array to efficiently boost signals at frequencies from a few hertz to several hundred kilohertz. The array has a power supply range of 10 to 80 V, which makes it well-suited for a variety of applications. Moreover, its excellent linearity ensures high-fidelity sound reproduction. The package is also very compact, which makes it easy to fit in tight spaces.
The SI3951DV-T1-GE3 is a multi-channel FM power amplifier array that provides a powerful amplification for audio signals. Its external control allows for precise tuning of the amplifiers for different applications. This makes the SI3951DV-T1-GE3 an ideal choice for audio applications ranging from car subwoofers to radio transmission. Thanks to its advanced process technology, it produces excellent musical output with a flat frequency response, reducing distortion and enhancing sound. Furthermore, its high power efficiency, wide frequency response, and wide voltage range make it well-suited for a variety of automotive, audio, portable, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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