Allicdata Part #: | SI3981DV-T1-GE3-ND |
Manufacturer Part#: |
SI3981DV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 1.6A 6-TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.6A 800mW Sur... |
DataSheet: | SI3981DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Base Part Number: | SI3981 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 800mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 185 mOhm @ 1.9A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI3981DV-T1-GE3 is a versatile device that is capable of being used in a wide range of applications. It is an integrated component that is made up of a MOSFET array, a base, and an optional instruction block. This device is designed to serve as a concentrator for high current applications, allowing a single MOSFET array to be used in place of multiple traditional MOSFETs.
A MOSFET array is a type of transistor that works by using an electrical charge to control the flow of current across a semiconductor material. The SI3981DV-T1-GE3 has a MOSFET array that is optimized for high-current applications, providing a low resistance path for the current to flow through. The device is also designed to minimize the switching losses that are associated with traditional MOSFETs. This allows it to operate at higher frequencies and with greater efficiency.
The base is another important component of the SI3981DV-T1-GE3. It is made up of a high-voltage, high-current transistor that provides the necessary voltage and current to drive the MOSFET array. The base also serves as an input stage for the device, allowing external signals to be applied to the device. This input stage can be used to switch the device on and off, allowing the device to be used in applications that require an "on-off" signal.
The optional instruction block is the third component of the SI3981DV-T1-GE3. It is a programmable ROM that can be used to store and execute instructions for the device. This allows the device to be used in applications that require more complex control than is possible with the base and MOSFET array alone. The instruction block can also be used to store data as well as execute multiple instructions simultaneously.
The SI3981DV-T1-GE3 is a powerful device that can be used in a wide range of applications. Its combination of a MOSFET array, a base, and an optional instruction block makes it ideal for applications that require high current, high frequency, and high efficiency. The device can be used in applications such as power switch controllers, automotive applications, lighting, medical devices, and many others.
The specific data is subject to PDF, and the above content is for reference
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