Allicdata Part #: | SI3993DV-T1-GE3-ND |
Manufacturer Part#: |
SI3993DV-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 1.8A 6-TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Sur... |
DataSheet: | SI3993DV-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI3993 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 133 mOhm @ 2.2A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI3993DV-T1-GE3 is an integrated N-channel MOSFET array module. This device features three MOSFETs in a single package, each with the same characteristics. As such, the module contains three independent N-channel MOSFETs operating off the same gate voltage. The voltage rating of each MOSFET is 30V. The device is suitable for a wide range of applications, including low-power motor control, power management and lighting control systems, among others. The SI3993DV-T1-GE3 is a great choice for designers needing a compact, versatile device for their system circuits.
The working principle of the SI3993DV-T1-GE3 is relatively simple. Each of the three MOSFETs in the module operates on the same gate voltage, meaning that when the gate voltage is applied, the MOSFETs are all activated. This provides a uniform switching action, allowing the module to be used in systems where power needs to be switched on and off in unison. By controlling the gate voltage, the user can control the drain current through the MOSFETs, and in turn control the power requirements of the system.
The SI3993DV-T1-GE3 is particularly useful for power management systems. By controlling the gate voltage, the device can limit the amount of power that is supplied to other components of the system. This is especially useful in applications where the load is constantly fluctuating and needs to be controlled to prevent it from becoming excessive. The MOSFETs in the module are also able to handle large currents, so it can be used for systems where high peak currents are needed.
The SI3993DV-T1-GE3 is also suitable for motor control applications. By varying the gate voltage, the user can control the speed of the motor. This device is also useful in lighting control systems, as it can be used to switch on and off individual lights or entire lighting systems. Additionally, the module can be used in applications where multiple loads need to be switched simultaneously, as each of the MOSFETs can be controlled independently.
In conclusion, the SI3993DV-T1-GE3 is a versatile integrated N-channel MOSFET array module suitable for a range of applications. The device provides three MOSFETs in a single package and is easily controlled with gate voltage. It is perfect for low-power motor control, power management and lighting control systems, as well as other applications where multiple loads need to be switched simultaneously.
The specific data is subject to PDF, and the above content is for reference
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