Allicdata Part #: | SI3911DV-T1-E3CT-ND |
Manufacturer Part#: |
SI3911DV-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 1.8A 6TSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.8A 830mW Sur... |
DataSheet: | SI3911DV-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
Base Part Number: | SI3911 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 2.2A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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SI3911DV-T1-E3 is an advanced complementary metal-oxide-semiconductor (CMOS) technology that is used as an array of low voltage (3.3V) MOSFET arrays. A MOSFET array contains several devices with different logical circuits, enabling them to be configured, switched on, and off, or enable logic operations to be performed. As a result of its advanced architecture and design, the SI3911DV-T1-E3 MOSFET array offers high current rating, low threshold voltage, and high level of current-to-voltage ratio. This makes it ideal for use in applications such as displays, DC-DC converters, general purpose switching and level shifting.
The SI3911DV-T1-E3 MOSFET array works similarly to other MOSFET arrays. It consists of a substrate containing several MOSFETs. Each MOSFET is composed of p-type and n-type semiconductor regions that form a gap between them. The gate of the MOSFET is then connected to the gate of the substrate. A voltage is then applied to the gate of the substrate which sets up a MOSFET junction between the two regions and allows current to flow.
The SI3911DV-T1-E3 MOSFET array is designed to provide higher levels of performance than traditional MOSFETs and is ideal for applications in which switching levels need to be improved dramatically. For example, it can be used in level shifting circuits, where the level of a signal has to be shifted from one voltage level to another. The SI3911DV-T1-E3 MOSFET array can also be used in display applications, including liquid crystal displays (LCDs) and plasma displays, where it provides higher brightness levels and a more uniform display.
The SI3911DV-T1-E3 MOSFET array is also used in a wide range of other applications, such as power conversion and management, temperature control, and many other control and switching functions. Its high current rating and low threshold voltage make it ideal for many applications requiring low-voltage operation.
The SI3911DV-T1-E3 MOSFET array offers many advantages over traditional MOSFETs. Its advanced architecture enables much higher current ratings to be achieved, with low threshold voltages, making it ideal for a variety of applications. Additionally, its small form factor allows it to be used in a number of applications, including DC-DC converters, level-shifting circuits, displays, and many other applications requiring low-voltage operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI3911DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 1.8A 6TS... |
SI3948DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 6-TSOPMo... |
SI3951DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.7A 6-T... |
SI3981DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 1.6A 6-T... |
SI3983DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.1A 6-T... |
SI3993DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 1.8A 6-T... |
SI3951DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 2.7A 6-T... |
SI3948DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 6-TSOPMo... |
SI3905DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 6-TSOPMos... |
SI3905DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 6-TSOPMos... |
SI3909DV-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 6TSOPMos... |
SI3909DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 6TSOPMos... |
SI3981DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 1.6A 6-T... |
SI3983DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 2.1A 6-T... |
SI3993DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 1.8A 6-T... |
SI3932DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 3.7A 6-T... |
SI3900DV-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 2A 6-TSO... |
SI3993CDV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 2.9A 6-T... |
SI3900DV-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 2A 6-TSO... |
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