SI4038DY-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4038DY-T1-GE3 is a N-channel MOSFET that is optimized to operate in very high-speed switching applications in modern circuits. It has a low gate charge, fast switching times, excellent ruggedness, and very low On-resistance. It is widely used in modern high-frequency applications in the advanced semiconductor integrated circuit industry.

The SI4038DY-T1-GE3 is part of a family of devices optimized for high-speed switching applications. It is a single N-channel MOSFET with low On-resistance, fast switching times and excellent ruggedness. It features a low gate charge (Qg) and a high transconductance (gm); an enhanced Avalanche capability; triple-diffused drain and source for improve avalanche and breakdown voltages, and support for both high-voltage applications and high-speed switching applications.

The SI4038DY-T1-GE3 is suitable for use in various types of power management, low-noise amplifier, power amplifier, commercial and automotive control, and clock generator and control applications. Its low gate charge, high transconductance and low On-resistance makes it suitable for applications requiring fast switching times. Its excellent ruggedness and enhanced avalanche capabilities also make it suitable for use in high-voltage applications.

The working principle of the SI4038DY-T1-GE3 is based on basic MOSFET physics. When a voltage is applied to the gate of the how, an electric field is created that modulates the number of electrons in the conducting channel between the source and drain region. This electric field can be used to control the conduction of the current between the source and drain. The SI4038DY-T1-GE3 utilizes this effect to provide fast switching and low On-resistance for high-performance switching applications.

The SI4038DY-T1-GE3 is a specialized MOSFET device, and its primary application is in very high-speed switching applications, such as those found in modern semiconductor integrated circuits. Its low gate charge and fast switching times make it an ideal device for high-frequency applications, and its excellent ruggedness and enhanced avalanche capability make it suitable for use in high-voltage applications. The device is widely used in the electronics industry, and its versatile design makes it highly suitable for use in a variety of modern switching applications.

The specific data is subject to PDF, and the above content is for reference