SI7212DN-T1-E3 Allicdata Electronics

SI7212DN-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI7212DN-T1-E3TR-ND

Manufacturer Part#:

SI7212DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 4.9A 1212-8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.3W Surf...
DataSheet: SI7212DN-T1-E3 datasheetSI7212DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Base Part Number: SI7212
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7212DN-T1-E3 is a module that is part of the SI7200 family of products from Silicon Laboratories. This family of products is composed of high performance transistors, FETs, and MOSFETs, and SI7212DN-T1-E3 is one of the most advanced of these. The SI7212DN-T1-E3 has a variety of applications and can be used in a wide range of applications including motor control, power systems and robotics.

The SI7212DN-T1-E3 module is an array of 8-bit field-effect transistors and can be used in both voltage and current mode applications. The module contains two pairs of identical and complementary transistors, each of which has 8-bit precision. This allows the user to obtain both higher voltage and higher current operation. The module has an impressive performance profile and can be used with a variety of applications, including automotive and industrial applications. Additionally, the chip has a wide operating temperature range and is suitable for use in both low and high-temp environments.

In terms of working principle, the SI7212DN-T1-E3 is a voltage-controlled device, meaning that the output current is determined by a predefined voltage that is applied to the gates. The transistor gates are then “charged” and the output current will become equal to the charge of the gates. As a result, the transistor can be used to drive large loads at high voltages, as well as for highly accurate and efficient current control.

The SI7212DN-T1-E3 can be used for a variety of applications, including switching applications and motor control. In switching applications, the device can be used to create large currents, as well as to accurately switch the current on and off at different levels. In motor control applications, the SI7212DN-T1-E3 can be used to drive high voltage loads, as well as to accurately control the speed of a motor. In addition, the device is also suitable for a variety of other applications, such as power systems, robotics and sensing applications.

The SI7212DN-T1-E3 is a versatile transistor array that provides powerful performance capabilities. The module is suitable for a variety of applications, including automotive and industrial applications. It is able to work accurately in a wide range of temperatures and is capable of operating with a wide range of voltages. This makes the device suitable for both low and high-temp applications. In terms of working principle, the device is a voltage-controlled device and is capable of driving large loads at high voltages. Furthermore, the device can also be used to accurately control the speed of a motor, making it a powerful tool for motor control applications.

The specific data is subject to PDF, and the above content is for reference

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