SI7214DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7214DN-T1-E3TR-ND

Manufacturer Part#:

SI7214DN-T1-E3

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 4.6A 1212-8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4.6A 1.3W Surf...
DataSheet: SI7214DN-T1-E3 datasheetSI7214DN-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.57000
10 +: $ 0.55290
100 +: $ 0.54150
1000 +: $ 0.53010
10000 +: $ 0.51300
Stock 1000Can Ship Immediately
$ 0.57
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI7214
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7214DN-T1-E3 is a transistor array that is used for a variety of applications. It consists of four N-channel enhancement mode MOS transistors that are arranged in an array to provide a broad range of performance. The SI7214DN-T1-E3 is designed to provide uniformity and synergy between the individual transistors while still optimizing performance.

The main application field for the SI7214DN-T1-E3 is power amplifiers and switching circuits due to its abundance of features. The four transistors are connected between the gate and source of each device and are also configured to have separate outputs. This opens up opportunities for a wide array of applications such as audio amplifiers, logic gate drivers, and microprocessor control systems. The device can also be used in power management applications where the logic and switching functions of the chip are utilized.

The working principle behind this device is simple. Each of the MOS transistors is connected between the gate and source of each device, and they are also configured to have separate outputs. When a signal is applied to the input of the array, it will cause the transistor to switch either on or off depending on the voltage applied to the gate. This can be used to create logic operations, or as a power management system that can switch between multiple power supplies at different voltage levels.

The SI7214DN-T1-E3 also has numerous features that make it suitable for a variety of applications. It has ESD protection exceeding 8KV and includes an internal current limit which can be adjusted from between 10mA to 35mA depending on the application. The device also has an integrated thermal shutdown that helps protect the chip in the event of an overload. The device has a low power consumption of about 5mW, making it ideal for portable applications. The SI7214DN-T1-E3 also features short-circuit and over-temperature protection.

Overall, the SI7214DN-T1-E3 is a versatile transistor array that can be used in a variety of applications. It is designed to provide uniformity and synergy between the individual transistors while still optimizing performance. The device has plenty of features that make it suitable for power amplifiers, switching circuits, audio amplifiers, logic gate drivers, and power management applications. Its low power consumption and integrated thermal protection also make it an ideal choice for portable applications.

The specific data is subject to PDF, and the above content is for reference

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