| Allicdata Part #: | SI7218DN-T1-GE3-ND |
| Manufacturer Part#: |
SI7218DN-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 30V 24A 1212-8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 24A 23W Surfac... |
| DataSheet: |  SI7218DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Base Part Number: | SI7218 |
| Supplier Device Package: | PowerPAK® 1212-8 Dual |
| Package / Case: | PowerPAK® 1212-8 Dual |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 23W |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 8A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Standard |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI7218DN-T1-GE3 is an array of high-voltage N-channel enhancement mode MOSFETs. It consists of two silicon N-channel enhancement mode power MOSFETs with very low on-resistance, including an integrated Schottky diode. It is a dual array device with a 15A maximum continuous drain current and an operating temperature range of -40°C to 150°C. The device is designed to provide extreme performance in high voltage applications such as power supply, DC/DC converters, high side switching and motor control. It has high switching speed with low on-resistance, making it ideal for applications requiring high efficiency and low power consumption. Because of its robust and reliable nature, the SI7218DN-T1-GE3 is suitable for many different types of applications. It can be used in automotive power electronics, industrial power supplies, and motored control applications. It is also used in LED lighting and battery powered applications. It has excellent thermal management for power devices due to its advanced air management system and excellent thermal cooling capabilities. It is also a highly efficient device with a low on-resistance of less than 4mOhms and it is capable of handling current spikes up to 10A. This makes it ideal for high frequency and high power applications.The SI7218DN-T1-GE3 consists of two high-performance advanced PowerTrench MOSFETs arranged in a dual-planar array configuration. Each of the two MOSFETs is designed to control drain-to-source current and features an integrated Schottky diode. The integrated Schottky diode helps in reducing the switching losses and improving the efficiency of the device. It has a low gate capacitance and is rated for a maximum voltage of 30V. The device also features an output protection circuit and a thermal shutdown. The working principle of the SI7218DN-T1-GE3 is based on the physical phenomenon of the majority carriers. The gate voltage is used to control the conductivity of the channel. When a positive gate voltage is applied, a depletion layer is created at the gate-channel interface which increases the resistance of the channel. This in turn reduces the drain-to-source current. Conversely, when a negative gate voltage is applied, the depletion layer is eliminated and the resistance of the channel is reduced, increasing the drain-to-source current. In conclusion, the SI7218DN-T1-GE3 is an excellent choice for high voltage applications due to its robust design, low on-resistance, thermal management capabilities, and excellent switching speed. It is suitable for many different applications including automotive, industrial, and lighting applications. Furthermore, its working principle is based on the physical phenomenon of the majority carriers and its high voltage control.
The specific data is subject to PDF, and the above content is for reference
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