SI7228DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7228DN-T1-GE3TR-ND

Manufacturer Part#:

SI7228DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 26A 23W Surfac...
DataSheet: SI7228DN-T1-GE3 datasheetSI7228DN-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7228
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SI7228DN-T1-GE3 Application Field And Working Principle

The SI7228DN-T1-GE3 is a high-performance, N-channel, field-effect transistor (FET) chip from Silicon Labs. This transistor is used as a switching device in many circuit applications, ranging from power control and motor control to electronic load control. The main application of the SI7228DN-T1-GE3 is in motor control, where its high-performance characteristics and low on-resistance make it an ideal choice.

The main transistor structure of the SI7228DN-T1-GE3 is a vertical channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). The P-channel MOSFET layout is the same as in a basic P-channel FET, albeit with a longer channel length to allow for higher doping concentrations and higher mobility. The N-channel version has an added thin dielectric layer that allows for the passivation of the nano-sized channel, thus improving its on-resistance and its overall electron mobility.

The SI7228DN-T1-GE3 is manufactured by Silicon Labs in a smaller die area than the commonly used vertical channel FETs from other manufacturers, which ensures that the device has less on-resistance and higher switching speed for the same amount of power consumed. This allows for better power efficiency in critical applications where power dissipation is a major influencer in performance.

The SI7228DN-T1-GE3 works on a two-port arrangement, with drain and source pins located at opposite ends of the transistor. When a voltage is applied to the gate of the transistor, a field-effect is created, which causes a shift in the threshold voltage of the device. This shift modulates the current flow from the drain to the source pin, and the magnitude of the shift is determined by the amount of current flowing through the gate.

The SI7228DN-T1-GE3 is ideal for motor control applications, due to its high switching speeds, low on-resistance, and low voltage drop across the device. Additionally, the device is highly reliable, with a maximum on-state resistance at 250degC remaining low and consistent. In motor control applications, the device can be used to switch up to 10A at up to 750V, allowing for accurate and reliable speed control of motor driven devices.

The SI7228DN-T1-GE3 can also be used in power control applications, especially in switching circuits where tight power control is required. Its low on-resistance and low voltage drop allow for very precise control of the output voltage and current, making the device particularly suitable for power factor correction and power sourcing.

The SI7228DN-T1-GE3 is a highly reliable and efficient transistor that is perfect for small-signal and power control applications. Its low on-resistance and high switching speed make it ideal for motor and power control applications, saving power, time and money.

The specific data is subject to PDF, and the above content is for reference

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