SI7272DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7272DP-T1-GE3TR-ND

Manufacturer Part#:

SI7272DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 25A PPAK SO-8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 25A 22W Surfac...
DataSheet: SI7272DP-T1-GE3 datasheetSI7272DP-T1-GE3 Datasheet/PDF
Quantity: 14750
Stock 14750Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7272
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7272DP–T1–GE3 is a ultra low RDS(on) Silicon controlled rectifier (SCR) array, comprised of two individual SCRs used as a switch semiconductor device.

This device is ideal for load or line side interposing and switch isolation applications due to its low RDS(on) and higher current carrying capability. The maximum drain current rating is 8.1A and the RDS(on) is as low as 25mΩ with a maximum operating voltage rating of up to 600V. It also offers low gate charge and low gate-to-drain charge which increases system power efficiency.

In addition, this SCR array offers standard lead frame packages that are RoHS compliant and feature low thermal resistance with a low profile, space saving design. The SI7272DP–T1– GE3 array is configured in a TO–263–5 package for design flexibility and is ideally used in lighting and motor drives applications.

The overall working principle of the SI7272DP–T1–GE3 array is based on the fundamentals of a standard silicon controlled rectifier. SCRs act as a switch which controls the flow of electricity between two power supplies, allowing or preventing the flow of electricity when triggered or “activated”. The main difference between traditional SCRs and SCR arrays is the ability of arrays to switch two power supplies simultaneously. This provides the user with a higher degree of flexibility when selecting the appropriate SCR.

The SI7272DP–T1–GE3 array also features built-in temperature anti-flicker protection. It utilizes an internal emitter-base voltage sensor that senses changes in temperature and reduces the risk of incorrect switching by preventing misoperation due to temperature flicker.

The SI7272DP–T1–GE3 array is typically used in lighting control and motor drive applications. Its low RDS(on) and higher current carrying capability makes it ideal for low-side load or line side interposing and switch isolation applications. Additionally, it is suitable for applications where switching noise or power dissipation is at a premium.

In conclusion, the SI7272DP–T1–GE3 array provides the performance and benefits of a standard SCR with the added advantage of two SCRs in one package. It offers low RDS(on), high current carrying capability, low gate charge, low gate-to-drain charge, built-in temperature anti-flicker protection, and a low thermal resistance, space saving design. It is suitable for lighting control and motor drive applications and is an ideal device for low-side load or line side interposing and switch isolation applications.

The specific data is subject to PDF, and the above content is for reference

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