SI7236DP-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7236DP-T1-GE3 is a power array manufactured by Vishay Siliconix. It is a four-terminal device, consisting of two pairs of P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with integrated diodes manufactured on a single chip. It is suitable for high-side load switching applications with operating voltage range of 4.5V to 18V and load current up to2.2A. The integrated Schottky Diode in this array helps reduce the overall power losses and reduce heat generation. This array provides protection against reverse voltage and short circuit and has protection against over-temperature.

The SI7236DP-T1-GE3 is a four-terminal MOSFET array, which is designed for high-side switching. It has an integrated Schottky diode and a high-side MOSFET pre-driver, which makes it suitable for a wide range of applications including motor control. The device features a low on-resistance of 0.5 Ohm, a wide operating voltage range of 4.5V to 18V and a high operating temperature range of -40°C to +125°C. The device also has a high-side MOSFET pre-driver, which provides improved EMI (electromagnetic interference) performance by reducing switching noise. It also has an integrated Schottky diode which helps reduce overall power losses and improve system efficiency.

The SI7236DP-T1-GE3 is widely used in motor control applications, such as light dimmers, motor drive systems and motor speed control. It is also used in automotive applications such as electric window lift systems and power window back plate systems. The device is also widely used in the industrial field, including HVAC and temperature control systems, UPS power supplies and LED lighting systems.

The device works by using a process of gate-source voltage (VGS) to turn on and off the transistor. When the gate-source voltage is high, the MOSFET is on and a current flows through the transistor. VGS is generally a positive voltage, typically 0.5V to 2V for N-MOSFET and 4V to 6V for P-MOSFET. The VGS can be provided by a power supply or by a microcontroller, depending on the application. When the gate-source voltage is low, the MOSFET is turned off and no current flows. In this way, the SI7236DP-T1-GE3 can be used to control the operation of a motor or other load device.

The SI7236DP-T1-GE3 is a highly versatile power array which is widely used in motor control, automotive and industrial applications. It is a four-terminal device consisting of two pairs of P-channel MOSFETs with integrated diodes. The integrated Schottky diode helps reduce overall power losses and improve system efficiency while the high-side MOSFET pre-driver provides improved EMI (electromagnetic interference) performance by reducing switching noise. The device operates within a wide operating voltage range of 4.5V to 18V and high operating temperature range of -40°C to +125°C, making it suitable for a range of applications.

The specific data is subject to PDF, and the above content is for reference