SI7220DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7220DN-T1-GE3 is a N-Channel MOSFET array designed to provide applications with low charge injection and low power dissipation. These devicesv’re designed with a power output stage with good drive capability, resulting to extremely high frequency switching. This type of technology is used in a wide range of devices such as smartphones and tablets, digital TVs, and PCs.

Features of SI7220DN-T1-GE3

The SI7220DN-T1-GE3 features quality performance with the inclusion of low power dissipation and low charge injection. Additionally, the device provides an operating voltage up to 30V, an extended breakdown voltage range, low leakage current, and high power output stage. The device also comes with optimized N-channel T-MOS FET technology in order to ensure fast switching, wide dynamic range, and precise power gain control. The fast switching feature ensures compressed settling time for improved system performance. On top of that, its wide dynamic range enables it to handle a broad range of system voltages and frequencies.

Applications of SI7220DN-T1-GE3

The SI7220DN-T1-GE3 is ideal for a wide range of applications, such as pipeline ADCs in audio, video, and communication systems, power drivers, step-up charge pumps, and voltage regulators. Additionally, it can be utilized as an output driver in DC/DC converters and isolated gate drivers. This N-Channel MOSFET array is applicable for use in mobile gadgets, mobile PCs, gaming consoles, and other high-end electronic devices.

Working Principles

The SI7220DN-T1-GE3 consists of 16 N-Channel MOSFETs in a tightly coupled flat-pack layout. The device utilizes optimized N-channel T-MOS FET technology for two reasons: it allows for enhanced power gain control and reliable fast switching. The emphasis of the device is on low power dissipation and low charge injection. The device’s flat-pack layout and flyback driver architecture optimize output stage performance and reduce overall power dissipation.

The SI7220DN-T1-GE3 also uses on-chip bootstrap diodes to prevent reverse polarity charging, which further ensures consistent operation and reliability. The device incorporates a wide range of advanced patented technologies, such as the dynaMIOS soft-start controller, which helps protect against thermal shutdown and allows for fast settling time. Additionally, it allows for operation down to 1V and supports a maximum switching frequency of 2MHz.

Conclusion

The SI7220DN-T1-GE3 is an N-Channel MOSFET array designed specifically for applications requiring low power dissipation and low charge injection. The device’s advanced design features ensure high switching speeds and precise power gain control for reliable operation. It is suitable for use in pipeline ADCs, power drivers, step-up charge pumps, voltage regulators, DC/DC converters, and isolated gate drivers in a wide range of electronic devices, such as mobile gadgets, mobile PCs, gaming consoles, and other high-end electronics.

The specific data is subject to PDF, and the above content is for reference