SI7232DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7232DN-T1-GE3TR-ND

Manufacturer Part#:

SI7232DN-T1-GE3

Price: $ 24.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 25A PPAK 1212-8Mosfet Array 2 N-C...
More Detail: N/A
DataSheet: SI7232DN-T1-GE3 datasheetSI7232DN-T1-GE3 Datasheet/PDF
Quantity: 2424
1 +: $ 24.62000
Stock 2424Can Ship Immediately
$ 24.62
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7232
Description

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The SI7232DN-T1-GE3 is a type of array transistor, specifically a FET (Field Effect Transistor) type one, that is designed to perform a particular purpose, depending on the application it is installed in. This type of transistor is useful in a variety of applications, due to its ability to control the flow of current with a relatively low input. The SI7232DN-T1-GE3 is most commonly used as a switch in digital logic circuits, as the logic level input can easily be used to control the output of the transistor.

The SI7232DN-T1-GE3 has three terminals: gate, source, and drain. The gate terminal is used to provide the necessary control signal to the transistor, and this is where the voltage level of the transistor is applied. The source terminal provides the input to the transistor when the input logic level changes from high to low, or from low to high, depending on the application. Finally, the drain terminal is used to control the current that flows through the transistor.

The principle behind the operation of the SI7232DN-T1-GE3 is based upon the fact that when a voltage is applied to the gate terminal of a FET device, it will either increase or decrease the conductivity of the device, depending on the polarity of the voltage. This effect is known as the FET gate-source voltage (Vgs).When the voltage applied to the gate is either greater than or equal to the threshold voltage of the device, then the device will enter a “on” state and current will be able to flow between the source and drain terminals. Therefore, when the voltage applied to the gate is lower than the threshold voltage, then the device enters a “off” state and current will not be able to flow between the source and drain terminals.

In terms of applications, the SI7232DN-T1-GE3 is commonly used to build logic circuits. For example, the SI7232DN-T1-GE3 can be used to build logic gates, such as AND, OR, NAND, and NOR. Additionally, the device can also be used for switching control in other digital systems, as well as for voltage level shifting. The SI7232DN-T1-GE3 can also be used in high frequency switching applications, as the device has a fast response time and low switch-on resistance.

In conclusion, the SI7232DN-T1-GE3 is a type of array transistor, specifically a FET (Field Effect Transistor) that is designed to be used in a variety of applications. This array transistor is utilized in fields such as digital logic circuits and high frequency switching, and it is particularly useful due to its ability to control current with a low input voltage.

The specific data is subject to PDF, and the above content is for reference

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